Magneto-straintronics on a Co-coordinating metalloboronfullerene

Liu, J.; Zhang, Yiming; Li, Chun; Jin, Wei; Lefkidis, Georgios; Hübner, Wolfgang

doi:10.1103/physrevb.102.024416

Cited by 11 publications

(7 citation statements)

References 62 publications

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“…Liu et al showed magnetostraintronics in Co-coordinating fullerenes and established the strain-to-spin dynamics correlation by choosing different vibrational modes. 38 Lefkidis et al suggested a functional topological spin-charge gearbox based on the real synthesized Co 3 Ni(EtOH) cluster driven with laser pulses. 39,40 Jin et al investigated the laser-induced ultrafast spin dynamics employing first-principles theory, and as a result, they were able to produce a variety of spin-flip and transfer scenarios in magnetic dimers.…”

Section: Introductionmentioning

confidence: 99%

Laser-induced ultrafast spin-transfer processes in non-linear zigzag carbon chain systems

Barhoumi,

Liu,

Lefkidis

et al. 2023

Phys. Chem. Chem. Phys.

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Section: Introductionmentioning

confidence: 99%

Laser-induced ultrafast spin-transfer processes in non-linear zigzag carbon chain systems

Barhoumi,

Liu,

Lefkidis

et al. 2023

Phys. Chem. Chem. Phys.

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“…However more information about straintronics and its applications can be found in the Refs. [54][55][56][57][58][59][60][61].…”

Section: Introductionmentioning

confidence: 99%

Spintronic devices: a promising alternative to CMOS devices

2021

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The field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read and write performance, nonvolatile nature, and easy 3D integration capability with the present-day electronic circuits based on CMOS technology. All these advantages have catapulted the aggressive research activities to employ spintronic devices in memory units and also revamped the concept of processing-in-memory architecture for the future. This review article explores the essential milestones in the evolutionary field of spintronics. It includes various physical phenomena such as the giant magnetoresistance effect, tunnel magnetoresistance effect, spin-transfer torque, spin Hall effect, voltage-controlled magnetic anisotropy effect, and current-induced domain wall/skyrmions motion. Further, various spintronic devices such as spin valves, magnetic tunnel junctions, domain wall-based race track memory, all spin logic devices, and recently buzzing skyrmions and hybrid magnetic/silicon-based devices are discussed. A detailed description of various switching mechanisms to write the information in these spintronic devices is also reviewed. An overview of hybrid magnetic /silicon-based devices that have the capability to be used for processing-in-memory (logic-in-memory) architecture in the immediate future is described in the end. In this article, we have attempted to introduce a brief history, current status, and future prospectus of the spintronics field for a novice.

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“…The essence of strain is to change the geometry and thus affect the electronic structure of the system. [42] In TM-doped GNFs, the magnetism of the struc-ture is mainly induced by the interaction between the TMatoms and the adjacent carbon atoms. Therefore, altering the bonds between the TM-atoms and the GNF can effectively adjust the electromagnetic characteristics of the system and more intuitively reflect the internal mechanism of the strain modulation.…”

Section: Introductionmentioning

confidence: 99%

Strain-modulated ultrafast magneto-optic dynamics of graphene nanoflakes decorated with transition-metal atoms*

Zhang¹,

Liu²,

Li³

et al. 2021

Chinese Phys. B

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We perform first-principles calculations and coherent laser-matter interaction analyses to investigate the laser-induced ultrafast spin flip on graphene nanoflakes (GNFs) with transition metal elements attached on the boundary [TM&GNFs (TM = Fe, Co, Ni)]. It is shown that the spin-flip process on TM&GNFs is highly influenced by the involved element species and the position attached to the nanoflakes. Furthermore, taking Ni&GNF as an example, the first-principles tensile test predicts that the variation of the C–Ni bond length plays an important role in the spin density distribution, especially for the low-lying magnetic states, and can therefore dominate the spin-flip processes. The fastest spin-flip scenario is achieved within 80 fs in a Ni&GNF structure under 10% tensile strain along the C–Ni bond. The local deformation modulation of spin flip provides the precursory guidance for further study of ultrafast magnetization control in GNFs, which could lead to potential applications in future integrated straintronic devices.

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Magneto-straintronics on a Co-coordinating metalloboronfullerene

Cited by 11 publications

References 62 publications

Laser-induced ultrafast spin-transfer processes in non-linear zigzag carbon chain systems

Laser-induced ultrafast spin-transfer processes in non-linear zigzag carbon chain systems

Spintronic devices: a promising alternative to CMOS devices

Strain-modulated ultrafast magneto-optic dynamics of graphene nanoflakes decorated with transition-metal atoms*

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