Magneto-Transport and Nanomagnet Dynamics in MgO-Based Magnetic Tunnel Junctions (MTJs)

Abstract

We investigate bias and different barrier thicknesses effects on quantities related to spin and charge currents in MgO-based magnetic tunnel junctions. Using the non-Equilibrium Green's function formalism, we demonstrate that the in-plane and out-of-plane components of the spin-transfer torque have asymmetric and symmetric behaviors respectively. Magneto-resistance also decreases with increasing barrier thickness. The Landau–Lifshits–Gilbert equation describes the dynamics of the magnetization made by spin transfer torque. Increasing in spin current above its critical value or smaller the magnet reduces the switching time which is major result for making of new memory devices.

Dynamics of magnetic system formed by two semi-skyrmions in circular nano-pillars with a perpendicular anisotropy

“…Initially stable microwave output system is a spin structure [10][11][12], but its power output is too low to reach the level required by practical applications. Later, a MgO-based magnetic tunnel junction structure was produced, offering larger values of the giant magnetoresistance coefficient, permitting higher power output [13]. Excessive line width is the most apparent disadvantage of STNOs of the above structures.…”