Magnetocapacitance and dissipation factor of epitaxial graphene-based quantum Hall effect devices

Schurr, J.; Kalmbach, Cay-Christian; Ahlers, F. J.; Hohls, Frank; Kruskopf, Mattias; Müller, A.; Pierz, K.; Bergsten, Tobias; Haug, Rolf J.

doi:10.1103/physrevb.96.155443

Cited by 8 publications

(6 citation statements)

References 43 publications

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“…This intrinsic capacitance likely contributes to the deviation from the nominal QHR value at AC and is proportional to the frequency [48,49]. This qualitative argument is consistent with our observations in this study and previous works [45,46,50], but the quantitative effects of the charge carrier density will require further systematic experimental investigations.…”

Section: Ac Behavior Of Quantized Hall Resistance Plateausupporting

confidence: 91%

Investigation of the stability of graphene devices for quantum resistance metrology at direct and alternating current

Chae

Kruskopf

Kucera

et al. 2022

Meas. Sci. Technol.

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Interlaboratory comparisons of the quantized Hall resistance are essential to verify the international coherence of primary impedance standards. Here we report on the investigation of the stability of p-doped graphene-based quantized Hall resistance devices at direct and alternating currents at CMI, KRISS, and PTB. To improve the stability of the electronic transport properties of the polymer encapsulated device, it was shipped in an over-pressurized transport chamber. The agreement of the quantized resistance with RK/2 at direct current was on the order of 1 nΩ/Ω between 3.5 T and 7.5 T at a temperature of 4.2 K despite changes in the carrier density during the shipping of the devices. At alternating current, the quantized resistance was realized in a double-shielded graphene Hall device. Preliminary measurements with digital impedance bridges demonstrate the good reproducibility of the quantized resistance near the frequency of 1 kHz within 0.1 μΩ/Ω throughout the international delivery.

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Section: Ac Behavior Of Quantized Hall Resistance Plateausupporting

confidence: 91%

Investigation of the stability of graphene devices for quantum resistance metrology at direct and alternating current

Chae

Kruskopf

Kucera

et al. 2022

Meas. Sci. Technol.

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“…The major reason for the success of the QHR with direct current (dc) for the realization of the unit ohm is its high robustness and its universality due to its direct relation to the natural constants h and e. Moreover, NMI research on the QHR with alternating current (ac) opened new routes that enable connecting the ohm to other units such as the farad and henry by natural constants [84,85]. Compared to GaAs, ac-quantum Hall measurements using epitaxial graphene were demonstrated to be favorable due to improved ac loss characteristics that allow for high precision primary impedance standards and enable direct access to the physical quantities capacitance and inductance [86][87][88].…”

Section: Discussionmentioning

confidence: 99%

Epitaxial graphene for quantum resistance metrology

Kruskopf

Elmquist

2018

Metrologia

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Graphene-based quantised Hall resistance standards promise high precision for the unit ohm under less exclusive measurement conditions, enabling the use of compact measurement systems. To meet the requirements of metrological applications, national metrology institutes developed large-area monolayer graphene growth methods for uniform material properties and optimized device fabrication techniques. Precision measurements of the quantized Hall resistance showing the advantage of graphene over GaAs-based resistance standards demonstrate the remarkable achievements realized by the research community. This work provides an overview over the state-of-the-art technologies in this field.

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“…The relatively weaker van der Waals bonds forming on layered substrates such as graphene or mica are considered to reduce the need for lattice matching conditions typically required in epitaxy where heterolayers form via covalent bonds with the substrates. , Using epitaxial graphene (EG) on SiC(0001) as a single-crystalline 2D substrate is here advantageous as it offers a well-defined crystal orientation, low defect density, and good temperature stability in combination with the possibility to reproducibly fabricate it directly on insulating SiC wafers (if semi-insulating SiC is used) without the need for any exfoliation or transfer steps. This makes EG in itself already interesting for high-end applications in quantum metrology . In EG, the graphene layers form via sublimation of Si from SiC where the layer number can be controlled via temperature or the miscut angle of the SiC substrate. , Therefore, h-BN on top EG can be directly applied as a protection or tunnel barrier layer in wafer-scale 2D devices (e.g., graphene-based devices).…”

Section: Introductionmentioning

confidence: 99%

“…This makes EG in itself already interesting for high-end applications in quantum metrology. 17 In EG, the graphene layers form via sublimation of Si from SiC where the layer number can be controlled via temperature or the miscut angle of the SiC substrate. 18,19 Therefore, h-BN on top EG can be directly applied as a protection or tunnel barrier layer in waferscale 2D devices (e.g., graphene-based devices 20 ).…”

Section: ■ Introductionmentioning

confidence: 99%

Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures

Heilmann

Prikhodko

Hanke

et al. 2020

ACS Appl. Mater. Interfaces

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Combining graphene and the insulating hexagonal boron nitride (h-BN) into two-dimensional heterostructures is promising for novel, atomically thin electronic nanodevices. A heteroepitaxial growth, in which these materials are grown on top of each other, will be crucial for their scalable device integration. However, during this so-called van der Waals epitaxy, not only the atomically thin substrate itself must be considered but also the influences from the supporting substrate below it. Here, we report not only a substantial difference between the formation of h-BN on single- (SLG) and on bi-layer epitaxial graphene (BLG) on SiC, but also vice versa, that the van der Waals epitaxy of h-BN at growth temperatures well below 1000 °C affects the varying number of graphene layers differently. Our results clearly demonstrate that the additional graphene layer in BLG enhances the distance to the corrugated, carbon-rich interface of the supporting SiC substrate and thereby diminishes its influence on the van der Waals epitaxy, leading to a homogeneous formation of a smooth, atomically thin heterostructure, which will be required for a scalable device integration of 2D heterostructures.

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Magnetocapacitance and dissipation factor of epitaxial graphene-based quantum Hall effect devices

Cited by 8 publications

References 43 publications

Investigation of the stability of graphene devices for quantum resistance metrology at direct and alternating current

Investigation of the stability of graphene devices for quantum resistance metrology at direct and alternating current

Epitaxial graphene for quantum resistance metrology

Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures

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