Magnetocrystalline Anisotropy and FMR Linewidth of Zr and Zn-Doped Ba-Hexaferrite Films Grown on MgO (111)

Hu, Bolin; Chen, Y.; Su, Zhongqing; Bennett, Steven; Burns, L.; Uddin, Ghulam Moeen; Ziemer, Katherine S.; Harris, Vincent G.

doi:10.1109/tmag.2013.2243122

Cited by 29 publications

(5 citation statements)

References 16 publications

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“…86 Similarly, it was shown by these same researchers that substitutions of In and Sc shifted the f FMR to below X-band. Li et al 87 reported on the substitution of Zr and Zn in BaM and found H A values to drop from ∼16 kOe to ∼9 kOe. Mössbauer studies presented in that report found Zn and Zr ions preferentially occupy the 2b and 4f VI sites, Table II.…”

Section: Engineering Magnetic Anisotropy In Ferrite Systemsmentioning

confidence: 99%

Review—Goodenough-Kanamori-Anderson Rules-Based Design of Modern Radio-Frequency Magnetoceramics for 5G Advanced Functionality

Harris

Andalib

2022

ECS J. Solid State Sci. Technol.

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5th generation (5G) wireless technologies promise a transition from 4G 2.3 GHz to Ka-band (i.e., 28-33 GHz) frequencies and the promise of revolutionary increases in data handling capacity and transfer rates at greatly reduced latency, among other benefits. A key enabling 5G technology is the development of massive multiple input – multiple output (m-MIMO) antenna arrays. m-MIMO array elements simultaneously transmit and receive data providing true full duplexing in time and frequency domains. Small cells, i.e., mobile and stationary base stations used to supplement existing 4G network infrastructure to boost signals in dense urban environments, will provide coverage over smaller areas to efficiently transmit signals over the millimeter wave spectrum. In order to realize these extraordinary advances, key materials must be developed, chief among them RF magnetoceramics. Here, we describe application of the long-standing Goodenough-Kanamori-Anderson rules for superexchange as guiding principles in the design of next generation magnetoceramics to meet the challenges of 5G wireless communication technologies and their timely implementation.

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Section: Engineering Magnetic Anisotropy In Ferrite Systemsmentioning

confidence: 99%

Review—Goodenough-Kanamori-Anderson Rules-Based Design of Modern Radio-Frequency Magnetoceramics for 5G Advanced Functionality

Harris

Andalib

2022

ECS J. Solid State Sci. Technol.

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“…Masoudpanah has used PLD to deposite SrM film on Si substrate and studied the effect of oxygen pressure on the microstructure and magnetic properties of SrM films [13]. However, few studies have been systematically reported on the influence of oxygen pressure on the BaM films [14,15].…”

Section: Introductionmentioning

confidence: 99%

The influence of oxygen pressure on the crystallographic structure and magnetic properties of BaM films on Al2O3(0001) substrate

Zheng¹,

Han²,

Zheng³

et al. 2016

Proceedings of the International Symposium on Mechanical Engineering and Material Science

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In this work, hexagonal barium ferrite thin films have been deposited on Al 2 O 3 (0001) substrates by pulsed laser deposition. The influence of oxygen pressure on the crystallographic structure and magnetic properties of BaM films has been studied. X-ray diffraction theta-2theta reveals the films have a good c-axis orientation perpendicular to the film plane under low oxygen pressure. It is also observed from scanning electron microscope that grain shape in the film surface is changed from platelets into elongated acicular with the increase of oxygen pressure. Magnetic hysteresis loops show the saturation magnetization and remanence of BaM films are greatly depended on the oxygen pressure. They are initially increased to a maximum value, then drastic decreased with increase of oxygen pressure. Consequently, films deposited at 0.08Pa have the highest saturation magnetization of 3900 Gs and remanence ratio of 74.5% which are comparable with the theoretical value of BaM bulk.

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“…Another basic advantage of IPCA BaM films lies in their higher ferromagnetic resonance (FMR) frequency, which reaches ~50 GHz at zero external field, about 45% higher than that of OCA ones29. However, unlike OCA BaM films, which have been fabricated on various substrates, like Al 2 O 3 (0001)162024, MgO (111)31, SiC (0001)121718, Si (111)19, GaN (0001)32 and Gd 3 Ga 5 O 12 (GGG) (111)13, successful fabrication of the IPCA BaM films has always been a challenge. It was not until the year 1992 that Hlyton et al .…”

mentioning

confidence: 99%

Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices

Zhang

Meng

Song

et al. 2017

Sci Rep

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Barium hexaferrite (BaM) films with in-plane c-axis orientation are promising and technically important materials for self-biased magnetic microwave devices. In this work, highly oriented BaM films with different thickness and an in-plane easy axis (c-axis) of magnetization were grown on a-plane single-crystal sapphire substrates by direct current magnetron sputtering. A procedure involving seed layers, layer-by-layer annealing was adopted to reduce the substrate-induced strains and allow for the growth of thick (~3.44 μm) films. The epitaxial growth of the BaM film on sapphire was revealed by high-resolution transmission electron microscopy with dislocations being observed at the film-substrate interface. The orientation was also verified by X-ray diffraction and more notably, polarized Raman scattering. The magnetic properties and ferromagnetic resonant frequencies were experimentally characterized by a vibrating sample magnetometry and a frequency-swept ferromagnetic resonant flip-chip technique, respectively. The micron-thick BaM films exhibited a large remanence ratio of 0.92 along in-plane easy axis and a small one of 0.09 for the in-plane hard axis loop measurement. The FMR frequency was 50.3 GHz at zero field and reached 57.9 GHz under a magnetic field of 3 kOe, indicating that the epitaxial BaM films with strong self-biased behaviors have good electromagnetic properties in millimeter-wave range.

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Magnetocrystalline Anisotropy and FMR Linewidth of Zr and Zn-Doped Ba-Hexaferrite Films Grown on MgO (111)

Cited by 29 publications

References 16 publications

Review—Goodenough-Kanamori-Anderson Rules-Based Design of Modern Radio-Frequency Magnetoceramics for 5G Advanced Functionality

Review—Goodenough-Kanamori-Anderson Rules-Based Design of Modern Radio-Frequency Magnetoceramics for 5G Advanced Functionality

The influence of oxygen pressure on the crystallographic structure and magnetic properties of BaM films on Al2O3(0001) substrate

Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices

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