It is reported that both dielectricity and magnetism at room temperature have been appreciably improved in Bi 4 Fe 2 TiO 12 film compared with that of Bi 4 Fe 2 TiO 12 bulk. X-ray diffraction profiles reveal similar single-phase crystalline nature and random orientation of the two but X-ray photoelectron spectroscopy experiments indicate 1.4 eV lower binding energy of core-state O 1s in film relative to those of bulk, so the improvement of multiferroics in film are attributed to the oxygen vacancies and high fraction of interface. The results have promising applications in multifunctional integrated devices.Multiferroics has become one of the time-honored issues in last years, herepolarization and spin order coexistent simultaneously in one entity [1][2][3][4][5][6][7].Considerable progresses in single-phase materials include direct manipulation of polarization reversal by magnetical field in single crystal TbMn 2 O 5 [1], giant magnetodielectric in single-crystal DyMnO 3 [2], and colossal magnetodielectric effects in single-crystal CdCr 2 S 4 [3]. However, so far, such strong multiferroic couplings have never been discovered in room temperature, although room-temperature strong coupling between magnetic field and polarization has recently reported in LuFe 2 O 4 single crystal, where dielectric constant can transiently decreases by only 20% [4]. Epitaxial FeBiO 3 thin films have been synthesized with remarkable spontaneous polarization, magnetism and magnetoelectric output at room temperature [5]. The interaction between spontaneous polarization and external magnetic field in Bi 0.6 Tb 0.3 La 0.1 FeO 3 single phase but thin film has also been suggested more pronounced with about 80% reduction of remanent polarization after magnetic-field treatment of 9 Tesla, as a consequence of magnetic-field-induced irreversible reorientation of grains [6]. However, the comparison between films and bulks in strong correlated multiferroic materials and uniqueness of multiferroics in film has rarely been discussed. This article presents room-temperature experimental results of enhanced dielectricity and magnetism in Bi 4 Fe 2 TiO 12 film in comparison with Bi 4 Fe 2 TiO12 bulk, wherein the origin of improvement is interpreted by the evidences from X-ray diffraction profiles and X-ray photoelectron spectroscopy (XPS).Bi 4 Fe 2 TiO 12 films were spin-coating deposited onto the platinized silicon layer by layer from chemical solution, and single-phase polycrystalline film with a thickness of hundreds of nanometers was then obtained by rapid annealing. Before the electric measurement, which was carried out under the HP4194 dielectric spectra analyzer at room temperature, top electrodes were prepared via conventional mask technology. The measurement of magnetism