1994
DOI: 10.1080/00150199408245099
|View full text |Cite
|
Sign up to set email alerts
|

Magnetoelectric effect of Cr2O3in strong static magnetic fields

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

8
73
1

Year Published

2004
2004
2023
2023

Publication Types

Select...
5
2
1

Relationship

1
7

Authors

Journals

citations
Cited by 86 publications
(82 citation statements)
references
References 7 publications
8
73
1
Order By: Relevance
“…This analysis shows that α el contributes one fourth of the total spin-driven magnetoelectric response of Cr 2 O 3 . The total response that we compute is in good agreement with zero-temperature extrapolations of experimental measurements, which range [7,20,21] from 2-4.7 × 10 −4 emu-CGS. Off-diagonal ME response of LiNiPO 4 : The lithium orthophosphates LiMPO 4 (M=transition metals) are currently attracting much interest for their potential use as cathodes in Li-ion batteries, as well as for their large magnetoelectric responses and the recent observation of ferrotoroidic domains in LiCoPO 4 [22].…”
supporting
confidence: 65%
“…This analysis shows that α el contributes one fourth of the total spin-driven magnetoelectric response of Cr 2 O 3 . The total response that we compute is in good agreement with zero-temperature extrapolations of experimental measurements, which range [7,20,21] from 2-4.7 × 10 −4 emu-CGS. Off-diagonal ME response of LiNiPO 4 : The lithium orthophosphates LiMPO 4 (M=transition metals) are currently attracting much interest for their potential use as cathodes in Li-ion batteries, as well as for their large magnetoelectric responses and the recent observation of ferrotoroidic domains in LiCoPO 4 [22].…”
supporting
confidence: 65%
“…Additionally, the induced magnetization at each site of silicon can be larger than the total induced magnetization of Cr 2 O 3 , the most well-known magnetoelectric material, with a m 0 dM=dε value of approximately 1 ps m − 1 . 29 Again, we are not claiming that compressed silicon is the best material for antiferromagnetic information technology exploiting the hidden orbital polarization; larger current-induced antiferromagnetism is expected in lower-symmetry materials. However, our proof-ofconcept calculations illustrate that it is a worthwhile research direction to search for materials with large hidden orbital polarizations useful in antiferromagnetic information technology, irrespective of the size of the SOC.…”
Section: Methodsmentioning
confidence: 99%
“…In the constant case, the α jumps at the interface between the medium and vacuum and yields a contribution to the corresponding boundary conditions, see [41]. Moreover, at least since the very exact measurements of Wiegelmann et al [68] no doubt was possible at the violation of the Post constraint in the case of the antiferromagnet Cr 2 O 3 .…”
Section: Violation Of the Post Constraintmentioning
confidence: 99%
“…Further experiments were then done mainly for the ME H case. Particular accurate measurements are those of Wiegelmann et al [68], see also [67,69]. They took magnetic fields B as high as 20 tesla and measured from liquid Helium up to room temperature.…”
Section: Experiments Of Astrov Rado and Folen And Wiegelmann Et Almentioning
confidence: 99%
See 1 more Smart Citation