2022
DOI: 10.1080/23746149.2022.2032343
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Magnetoelectricity in two-dimensional materials

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Cited by 8 publications
(2 citation statements)
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“…This kind of ME coupling could be used to develop new-generation memory devices in which data can be written electrically and read magnetically, avoiding the drawback of high writing energy in conventional magnetic random-access memory. [8][9][10] Depending on the microscopic FE mechanism, multiferroic materials can be divided into two categories, i.e., type-I and type-II. In type-I multiferroics, the ferroelectricity and magnetism originate from different atoms.…”
Section: Introductionmentioning
confidence: 99%
“…This kind of ME coupling could be used to develop new-generation memory devices in which data can be written electrically and read magnetically, avoiding the drawback of high writing energy in conventional magnetic random-access memory. [8][9][10] Depending on the microscopic FE mechanism, multiferroic materials can be divided into two categories, i.e., type-I and type-II. In type-I multiferroics, the ferroelectricity and magnetism originate from different atoms.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, the coupling between ferroelectric (FE) and ferromagnetic (FM) orders leads to the magnetoelectric (ME) coupling effect, which offers a unique opportunity to control the spin by applying an electric field. This kind of ME coupling could be used to develop new-generation memory devices in which data can be written electrically and read magnetically, avoiding the drawback of high writing energy in conventional magnetic random-access memory [8][9][10] .…”
mentioning
confidence: 99%