Magnetoelectronic properties of graphene dressed by a high-frequency field

Kibis, O. V.; Morina, S.; Dini, K.; Shelykh, I. A.

doi:10.1103/physrevb.93.115420

Cited by 57 publications

(46 citation statements)

References 58 publications

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“…To find the dispersion of the surface states (20)- (21) for small in-plane wave vectors k x,y , we have to project the total Hamiltonian (10) to the subspace spanned by these two states, Ψ 1 and Ψ 2 . Keeping the terms linear in k x,y , we arrive at the Hamiltonian, (23) where σ x,y are the Pauli matrices written in the basis (20)- (21). Diagonalizing the Hamiltonian (23), we can write the sought energy spectrum of the surface states (20)- (21) near k x = k y = 0 as…”

Section: Resultsmentioning

confidence: 99%

Optically induced topological states on the surface of mercury telluride

Kyriienko

Shelykh

2019

Phys. Rev. B

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We developed the theory which describes the Floquet engineering of surface electronic modes in bulk mercury telluride (HgTe) by a circularly polarized electromagnetic field. The analysis shows that the field results in appearance of the surface states which arise from the mixing of conduction and valence bands of HgTe. Their branches lie near the center of the Brillouin zone and have the Dirac dispersion characteristic for topological states. Besides them, the irradiation induces the gap between the conduction and valence bands of HgTe. Thus, the irradiation can turn mercury telluride into topological insulator from gapless semiconductor. It is demonstrated that the optically induced states differ substantially from the non-topological surface states existing in HgTe without irradiation. The structure of the found states is studied both analytically and numerically in the broad range of their parameters.

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Section: Resultsmentioning

confidence: 99%

Optically induced topological states on the surface of mercury telluride

Kyriienko

Shelykh

2019

Phys. Rev. B

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“…Based on the energy factor in Eq. (27), the resonant conditions can be summarized as E s1s2 (ǫ, n, m) = 0, where ǫ is a transition energy. Around the resonance, the conductivity behaves as a Lorentz type divergence [E s1s2 (ǫ+δE +iΓ, n, m)] −1 with respect to δE.…”

Section: A Results Of Ggmentioning

confidence: 99%

Nonlinear magneto-optic effects in doped graphene and in gapped graphene: A perturbative treatment

Cheng

Chen

2018

Phys. Rev. B

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The nonlinear magneto-optic responses are investigated for gapped graphene and doped graphene in a perpendicular magnetic field. The electronic states are described by Landau levels, and the electron dynamics in an optical field is obtained by solving the density matrix in the equation of motion. In the linear dispersion approximation around the Dirac points, both linear conductivity and third order nonlinear conductivities are numerically evaluated for infrared frequencies. The nonlinear phenomena, including third harmonic generation, Kerr effects and two photon absorption, and four wave mixing, are studied. All optical conductivities show strong dependence on the magnetic field. At weak magnetic fields, our results for doped graphene agree with those in the literature. We also present the spectra of the conductivities of gapped graphene. At strong magnetic fields, the third order conductivities show peaks with varying the magnetic field and the photon energy. These peaks are induced by the resonant transitions between different Landau levels. The resonant channels, the positions, and the divergences of peaks are analyzed. The conductivities can be greatly modified, up to orders of magnitude. The dependence of the conductivities on the gap parameter and the chemical potential is studied.

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“…It should be noted that the appearance of the Bessel functions in expressions describing dressed electrons is characteristic feature of various quantum systems driven by a dressing field. Particularly, the similar Bessel-function factors describe renormalized electronic properties of dressed quantum wells [58,59] and graphene [60,61].…”

Section: Discussionmentioning

confidence: 99%

Resonance fluorescence from an asymmetric quantum dot dressed by a bichromatic electromagnetic field

2017

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We present the theory of resonance fluorescence from an asymmetric quantum dot driven by a two-component electromagnetic field with two different frequencies, polarizations and amplitudes (bichromatic field) in the regime of strong light-matter coupling. It follows from the elaborated theory that the broken inversion symmetry of the driven quantum system and the bichromatic structure of the driving field result in unexpected features of the resonance fluorescence, including the infinite set of Mollow triplets, the quench of fluorescence peaks induced by the dressing field, and the oscillating behavior of the fluorescence intensity as a function of the dressing field amplitude. These quantum phenomena are of general physical nature and, therefore, can take place in various double-driven quantum systems with broken inversion symmetry.

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Magnetoelectronic properties of graphene dressed by a high-frequency field

Cited by 57 publications

References 58 publications

Optically induced topological states on the surface of mercury telluride

Optically induced topological states on the surface of mercury telluride

Nonlinear magneto-optic effects in doped graphene and in gapped graphene: A perturbative treatment

Resonance fluorescence from an asymmetric quantum dot dressed by a bichromatic electromagnetic field

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