Magnetogalvanic Sensors

Popović, R.S.; Heidenreich, Wolfgang

doi:10.1002/9783527620166.ch3

Cited by 7 publications

(2 citation statements)

References 58 publications

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“…Semiconductor Magnetic Field Sensors exploit the galvanomagnetic effects, which are due to the action of the Lorentz force on the charge carriers [1]. In a phosphorous doped semiconductor material, the product of the electron mobility and the magnetic induction causes the sensitivity to magnetic fields [2]. Hence high charge carrier mobility is crucial for achieving high sensitivity.…”

Section: Introductionmentioning

confidence: 99%

A Silicon Magnetic-Field Sensor: Low-Temperature Performance Evaluation

García-Ramírez

Sandoval-Ibarra

Gutiérrez-Domínguez³

2007

JART

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A Si magnetic field-sensitive split-drain MOSFET has been used to study and analyze the effects of a magnetic field on the charge carrier conduction at liquid-nitrogen temperature. In magnetic field sensors (MFS), a key parameter is the Hall angle, which indicates the current line deviation due to the Lorentz force acting on the charge carriers. If temperature is lowered, the carrier mobility increases, therefore, an increase in carrier deflection is expected. To understand the internal deflection of carriers, and optimize the design of a magnetic field sensor, a semi-analytic model has been developed. Using such a model, a MFS has been fabricated and tested. The first experimental results are presented in this work.

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Section: Introductionmentioning

confidence: 99%

A Silicon Magnetic-Field Sensor: Low-Temperature Performance Evaluation

García-Ramírez

Sandoval-Ibarra

Gutiérrez-Domínguez³

2007

JART

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“…When the polarity of Id, in the compensation winding is inverted by operating the switch, the transducer output signal is given by: (4) In this way, the evaluation of a can be performed by two dc measurements of the signal V,,, and the knowledge of the I& value of the superimposed polarisation current.…”

Section: Amethodtoimpmethetransducerperformancesmentioning

confidence: 99%

A linearisation method for commercial Hall-Effect current transducers

Cristaldi

Ferrero

Lazzaroni

et al.

Proceedings of the 17th IEEE Instrumentation and Measurement Technology Conference [Cat. No. 00CH37066]

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The need for high-current transducers featuring wide band and high-insulation levels is becoming a more and more impelling need, in the electric power network, as the current distortion increases, due to the proliferation of non-linear, time-variant loads. The Hall-effect current transducers show a good compromise between cost and metrological performance. On the other hand, they may introduce an unacceptable non-linearity error when the input current dynamics is a reduced portion of the transducer full-scale dynamics, and show a large drifr of their gain with temperature. The paper proposes a simple method for reduction of the non-linearity error when the input signal is an unbiased sinewave and the automatic calibration of the gain. Experimental results are also reported, showing the method effectiveness.

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