Magnetoplasmons in a High Electron Mobility GaAs/AlGaAs Heterostructure

Białek, M.; Karpierz, K.; Piętka, B.; Grynberg, M.; Łusakowski, J.; Czapkiewicz, M.; Fronc, K.; Wróbel, J.; Umansky, V.

doi:10.12693/aphyspola.122.1096

Cited by 1 publication

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“…Testing the same detectors at much lower frequencies, in the range 0.1 -0.6 THz, we found that we were able to excite plasmons with the wave vector of the fundamental mode equal to the width of the mesa, i.e., 65 µm. 29 Taking all these observations into account we conclude that the spectrum of plasmons generated depends both on the range of the radiation frequency used and geometrical details of a given detector design. This variety of possible plasmons generated in one sample can be considered as discouraging, but we rather see in this observation a chance to control plasmon resonances by a proper design of the detector geometry.…”

Section: Discussionmentioning

confidence: 94%

Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

Białek

Witowski

Орлита

et al. 2014

Journal of Applied Physics

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In order to characterize magnetic-field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the cyclotron resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with the THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

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Section: Discussionmentioning

confidence: 94%