Magnetoresistance and magnetic susceptibility in CeNiSn

Terashima, Taichi; Terakura, C.; Aoki, Hidekazu; Echizen, Y.; Takabatake, Toshiro

doi:10.1016/s0921-4526(00)00651-7

Cited by 3 publications

(2 citation statements)

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“…8,9,11 Since the width of the gap is small, the magnetic field B may alter the electronic structure via the Zeeman splitting of the up-and down-spin energy bands. There are some experimental indications that the gap may be suppressed by the field applied along the a axis, 8,[13][14][15][16] which is the easy axis of magnetization.…”

Section: Introductionmentioning

confidence: 99%

Dynamical properties of guest ions in the type-I clathrate compoundsX8Ga16Ge30(X

et al. 2006

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The resistivity and Hall effect in CeNiSn are measured at temperatures down to 35 mK and in magnetic fields up to 20 T with the current applied along the b axis. The resistivity at zero field exhibits a quadratic temperature dependence below ϳ0.16 K with a huge coefficient of the T 2 term (54 ⍀ cm/K 2 ). The resistivity as a function of field shows an anomalous maximum and dip, the positions of which vary with field directions. Shubnikov-de Haas ͑SdH͒ oscillations with a frequency F of ϳ100 T are observed for a wide range of field directions in the ac and bc planes, and the quasiparticle mass is determined to be ϳ(10-20)m e . The carrier density is estimated to be ϳ10 Ϫ3 electron/Ce. In a narrow range of field directions in the ac plane, where the magnetoresistance-dip anomaly manifests itself clearer than in other field directions, a higherfrequency (Fϭ300-400 T) SdH oscillation is found at high fields above the anomaly. This observation is discussed in terms of possible field-induced changes in the electronic structure.Single-crystalline ingots of CeNiSn were grown by the Czochralski method and were purified by a solid-state elec-PHYSICAL REVIEW B 66, 075127 ͑2002͒

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Section: Introductionmentioning

confidence: 99%

Dynamical properties of guest ions in the type-I clathrate compoundsX8Ga16Ge30(X

et al. 2006

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“…8,9,11 Since the width of the gap is small, the magnetic field B may alter the electronic structure via the Zeeman splitting of the up-and down-spin energy bands. There are some experimental indications that the gap may be suppressed by the field applied along the a axis, 8,13,14,15,16 which is the easy axis of magnetization.…”

Section: Introductionmentioning

confidence: 99%

Resistivity, Hall effect, and Shubnikov–de Haas oscillations in CeNiSn

et al. 2002

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The resistivity and Hall effect in CeNiSn are measured at temperatures down to 35 mK and in magnetic fields up to 20 T with the current applied along the b axis. The resistivity at zero field exhibits quadratic temperature dependence below ∼0.16 K with a huge coefficient of the T 2 term (54 µΩcm/K 2 ). The resistivity as a function of field shows an anomalous maximum and dip, the positions of which vary with field directions. Shubnikov-de Haas (SdH) oscillations with a frequency F of ∼100 T are observed for a wide range of field directions in the ac and bc planes, and the quasiparticle mass is determined to be ∼10-20 m e . The carrier density is estimated to be ∼10 −3 electron/Ce. In a narrow range of field directions in the ac plane, where the magnetoresistance-dip anomaly manifests itself clearer than in other field directions, a higher-frequency (F = 300 ∼ 400 T) SdH oscillation is found at high fields above the anomaly. This observation is discussed in terms of possible field-induced changes in the electronic structure.

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