Magnetoresistance and Preferred Orientation in Fe–Mn/Ni–Fe/Cu/Ni–Fe Sandwiches with Various Buffer Layer Materials

Nakatani, Ryoichi; Hoshino, Kuniyoshi; Noguchi, Shoichi; Sugita, Y.

doi:10.1143/jjap.33.133

Cited by 105 publications

(29 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, an enlarged amount of (111) textured γ-FeMn crystallites is required to optimize H eb in FeNi/FeMn systems [11], [12]. A Cu buffer layer has been shown either to promote [13] or to impede [14] the required texture. Detailed investigations on the structural properties are currently performed in order to clarify these different observations.…”

Section: Ii) Exchange-bias In Feni/femn Bilayersmentioning

confidence: 99%

Modification of the exchange bias effect by He ion irradiation

et al. 2000

View full text Add to dashboard Cite

Section: Ii) Exchange-bias In Feni/femn Bilayersmentioning

confidence: 99%

Modification of the exchange bias effect by He ion irradiation

et al. 2000

View full text Add to dashboard Cite

“…A uniform bilayer of NiFe(3 nm)/FeMn (2.4 nm) was also prepared. A 15 nm Cu buffer layer was used to stimulate the fcc (111) preferred growth of FeMn and to enhance EB [16]. The EB was established by a magnetic field applied in the film plane during deposition.…”

mentioning

confidence: 99%

Rotation of the Pinning Direction in the Exchange Bias Training Effect in PolycrystallineNiFe/FeMnBilayers

et al. 2008

View full text Add to dashboard Cite

For polycrystalline NiFe/FeMn bilayers, we have observed and quantified the rotation of the pinning direction in the exchange bias training and recovery effects. During consecutive hysteresis loops, the rotation of the pinning direction strongly depends on the magnetization reversal mechanism of the ferromagnet layer. The interfacial uncompensated magnetic moment of antiferromagnetic grains may be irreversibly switched and rotated when the magnetization reversal process of the ferromaget layer is accompanied by domain wall motion and domain rotation, respectively.

show abstract

“…Even though the "bottom structure" had FeMn AFM layer, it did not exhibit any exchange bias characteristics, but showed a similar magnetic coercivity to that of "PMLs." According to the previous reports, [19][20][21] FeMn has two magnetic phases, nonantiferromagnetic phase ͑␣-Mn structure͒, and antiferromagnetic phase ͑␥-Mn structure͒. Considering Eq.…”

Section: A Physical Contribution Of K Afm ã T Afm To the Exchange Bimentioning

confidence: 98%

A physical model of exchange bias in [Pd/Co]5/FeMn thin films with perpendicular anisotropy

Lin¹,

Thiyagarajah²,

Joo³

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

A physical model of perpendicular exchange bias (PEB) has been established based on the total energy equation per unit area of an exchange bias system by assuming coherent rotation of the magnetization. The anisotropy energy of antiferromagnetic (AFM) layer, KAFM×tAFM, as well as ferromagnetic (FM) multilayers, KFM,eff×tFM, and the interfacial exchange coupling energy, Jex were considered as primary physical parameters in building up the physical model of PEB phenomenon. It was proposed that the PEB is a result of the energy competition between KAFM×tAFM, KFM,eff×tFM, and Jex; where KAFM×tAFM≥Jex, is a critical condition to observe exchange bias in the system. In particular, it was revealed that Jex is directly relevant to the net magnetization of FM and AFM spin structure, Jex∝cos αAFM×cos βFM, in the perpendicular direction rather than the magnetization angle difference observed in an in-plane system. The physical role of perpendicular anisotropy energy, KFM,eff×tFM was also found to be significant to enhance the PEB. These physical characteristics are completely different from those are observed from an exchange bias system with in-plane anisotropy. The physical validity of the proposed PEB model was confirmed using different structures of exchange biased [Pd/Co]5/FeMn thin films with perpendicular anisotropy. The experimentally analyzed results demonstrated that the physical model of PEB proposed in this work is agreed well with the experimentally observed PEB phenomenon. Furthermore, the proposed model was found to be effective to design and to predict a new PEB system for the advanced spintronics applications.

show abstract

Magnetoresistance and Preferred Orientation in Fe–Mn/Ni–Fe/Cu/Ni–Fe Sandwiches with Various Buffer Layer Materials

Cited by 105 publications

References 13 publications

Modification of the exchange bias effect by He ion irradiation

Modification of the exchange bias effect by He ion irradiation

Rotation of the Pinning Direction in the Exchange Bias Training Effect in PolycrystallineNiFe/FeMnBilayers

A physical model of exchange bias in [Pd/Co]5/FeMn thin films with perpendicular anisotropy

Contact Info

Product

Resources

About