Magnetoresistance Anisotropy in Antimony in the Range of 4.2 to 77 °K

Bogod, Yu. A.; Krasovitskii, V. B.

doi:10.1002/pssb.19700400241

Cited by 5 publications

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“…5 indicates that they are different, which suggests that there must be some additional factor which affects the resistivity in magnetic field. In the past, similar anisotropy was observed in clean specimens of low-carrier-density materials such as Bi [27] and Sb [28], and was explained in terms of the static skin effect [20], that is, the formation of a surface layer of additional conductivity due to skipping orbits when the magnetic field is nearly parallel to a specular surface. In this regard, since the top and bottom surfaces of our sample were cleaved (001) plane, it is understandable that the static skin effect creates a surface conduction layer near the specular (001) surface for the magnetic field along [010], leading to a reduced resistivity.…”

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confidence: 64%

Spin-orbit coupling and anomalous angular-dependent magnetoresistance in the quantum transport regime of PbS

et al. 2010

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We measured magnetotransport properties of PbS single crystals which exhibit the quantum linear magnetoresistance (MR) as well as the static skin effect that creates a surface layer of additional conductivity. The Shubnikov-de Haas oscillations in the longitudinal MR signify the peculiar role of spin-orbit coupling. In the angular-dependent MR, sharp peaks are observed when the magnetic field is slightly inclined from the longitudinal configuration, which is totally unexpected for a system with nearly spherical Fermi surface and points to an intricate interplay between the spin-orbit coupling and the conducting surface layer in the quantum transport regime. PACS numbers: 72.20.My, 71.18.+y, 73.25.+i, Recently, non-trivial consequences of the spin-orbit coupling (SOC) in crystalline solids are a major theme in condensed matter physics [1]. For example, the spin Hall effect is a striking manifestation of the SOC in non-magnetic materials [2], and the SOC in noncentrosymmetric superconductors gives rise to an unconventional order-parameter symmetry [3]. Even more strikingly, it was recognized that a certain class of narrow-gap semiconductors where the energy gap is a product of the SOC are topological insulators, whose valence band structures is characterized by a non-trivial Z 2 topological invariant [4][5][6][7][8][9]. The three-dimensional topological insulators host helically spin-polarized surface states and are predicted to exhibit various novel phenomena [7][8][9][10][11]. After the discovery of the topologicalinsulator nature in Bi 1−x Sb x , Bi 2 Se 3 , and Bi 2 Te 3 [12-15], those three materials are under intense investigations.In this context, the narrow-gap semiconductor PbS would make a useful comparison, because its energy gap is due to a strong SOC but its valence band structure lends itself to the trivial Z 2 topological class [8]; namely, PbS is a non-topological insulator. Nevertheless, this material may be called an "incipient" spin Hall insulator, since the energy gap of the SOC origin in PbS causes a large Berry phase in the Bloch states and leads to a finite intrinsic spin Hall conductivity σ s H even in the insulating state [16]. Therefore, the role of the SOC in the transport properties of this material is worth investigating with the modern understanding.PbS has a rock salt crystal structure and has a direct energy gap of about 0.3 eV located at the four equivalent L points of the Brillouin zone [17]. Depending on whether S is excessive or deficient, both p-and n-type PbS can be prepared, and in both cases the Fermi surface (FS) is very nearly spherical [17,18]. This material was well studied in the past for its potential in the infrared applications [17]. More recently, PbS is attracting attentions in the photovoltaic community because of the multi-exiton generation [19]. In this Letter, we report our detailed study of the magnetoresistance (MR) sample, which exhibits a deviation from the classical linear behavior (shown by the solid straight line) and a saturation above 4 T in the quantu...

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confidence: 64%

Spin-orbit coupling and anomalous angular-dependent magnetoresistance in the quantum transport regime of PbS

et al. 2010

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“…Their period was approximately half of the period of hole SdH oscillations in the quasiclassic range of magnetic field [14]. We obtained an overlap energy ep 32 meV, when comparing the observed oscillations with the hole HTO given by equation (3). The value is the same as obtained in [l to 71.…”

Section: Resultsmentioning

confidence: 74%

“…We assume that the spin electron splitting is equal or slightly larger than the orbital one. We also assume here According to preliminary data in [20], the HTO occurs in Bi at H 11 C1 and fiDe > E$ (the ultraquantum limit for electrons). But the principal disadvantage of this work is the use of the Sb monocrystal for the compensation of the monotonic part of magnetoresistance of Bi.…”

Section: Comparison With Experimentsmentioning

confidence: 99%

“…But the principal disadvantage of this work is the use of the Sb monocrystal for the compensation of the monotonic part of magnetoresistance of Bi. The weakness here is the possibility of oscillations caused by Sb itself: a magnetic field of 60 kOe was used in [20] and the ultraquantum limit occurred in Sb at H N lo3 kOe. The other problem, which may arise is the significant difference in the field dependence of the magnetoresistances for Sb and Bi in fields H > 30 kOe [21].…”

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confidence: 99%

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The origin of the “high temperature” oscillations of kinetic coefficients of bismuth in the magnetic field

Bogod

Libinson

1996

Physica Status Solidi (b)

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The electrical conductivity of a Bi monocrystal in high magnetic field (ultraquantum limit) was measured. The special quantum oscillations of the kinetic coefficients in the magnetic field (high temperature oscillations -HTO) discovered in 1973 have been considered. The analysis of the experimental data verified one of two alternative models of HTO. The chosen model relates the HTO with the interband electron-hole transitions near band limits.

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“…The measurement scheme was the same as in [7]. Below the results are given obtained mainly on the sample Bi-6 with R300/Ra,2= = 540, transverse sizes (6.7 x 7.2) mm4 and the distance between the contacts 1 and 5 equal to 5.5 mm.…”

Section: Techniquementioning

confidence: 99%

Experimental Studies of Magnetoresistance Tensor Components in Bismuth at Low Temperatures

Bogod

Krasovitskii

1974

Physica Status Solidi (b)

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The monotonic and oscillating parts of the magnetoresistance tensor components are studied on a pure single crystals of bismuth. The nondiagonal-to-diagonal components ratio is shown to be sufficiently small a t helium tcmperatures, so that ozz = l/ezz with a high degree of accuracy, and thus the experimental deviations from the law ezz = aHn (m = 2 for u,t > 1) are independent of the electron-hole compensation disturbance in Bi.Within the framework of the ellipsoidal parabolic model taking account of the relaxation time anisotropy, the mobility tensor components at helium temperatures are found whose values coincide with data obtained by other authors in weak (uC.< 1) magnetic fields. It has been revealed that for magnetic field directions H near twinning planes the sign of an even constituent of the nondiagonal magnetoresistance tensor components becomes opposite t o t h a t for samples with no twinning interlayer. The twinning plane effect is essential up to 70 OK. It is also found that a t helium temperatures the even constituent eyz(H) changes its sign in high magnetic fields (10 kOe) near H 11 C,. It is shown that the transition in the H 11 C, direction under H rotation in the bisectrix plane causes the oscillation phase of the even constituent evz t o change. It is found that in the preultraquantum region of the magnetic fields the oscillating part of eyD turns out to be greater at certain H directions than the monotonic one.Die monotonen und oszillierenden Anteile der Tensorkomponenten der Magnetowiderstandsanderung werden an einem reinen Wismuth-Einkristall untersucht. Es wird gezeigt, daB das Verhaltnis der nichtdiagonalen zu den diagonalen Komponenten bei Heliumtemperaturen genugend klein ist, so daB ozD = l/ezz mit hoher Genauigkeit ist und somit sind die experimentellen Abweichungen vom Gesetz ezz = nHn ( n = 2 fur uCt 3 1) unabhangig von der Storung der Elektronen-Loch-Kompensation in Bi. I m Rahmen des parabolischen Ellipsoidmodells bei Berucksichtigung der Anisotropie der Relaxationszeit werden die Komponenten des Beweglichkeitstensors bei Heliumtemperatur gefunden, deren Werte mit den Werten anderer Autoren in schwachen Magnetfeldern (uCt < 1) ubereinstimmen.Es wird gefunden, daB fur Magnetfeldrichtungen H in der Nahe von Zwillingsebenen das Vorzeichen eines geraden Bestandteils einer nichtdiagonalen Tensorkomponente der Magnetowiderstandsanderung umgekehrt wird im Vergleich zu Proben ohne Zwillingszwischenflachen. Der EinfluB der Zwillingsebenen ist bis zu 70 O K wesentlich. Es wird auch gefunden, daB bei Heliumtemperaturen der gerade Bestandteil eyD(H) sein Vorzeichen in hohen Magnetfeldern (10 KOe) bei H 11 C, andert. Es wird gezeigt, daB der tfbergang in die H I I C,-Richtung bei H-Rotation in der Bisectrixebene eine Anderung der Schwingungsphase des geraden Bestandteils ell% verursacht. I m Pre-Ultraquantenbereich der Magnetfelder wird gefunden, daB der oszillierende Anteil von evZ bei bestimmten H-Richtungen groBer als der monotone Anteil ist.

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Magnetoresistance Anisotropy in Antimony in the Range of 4.2 to 77 °K

Cited by 5 publications

References 1 publication

Spin-orbit coupling and anomalous angular-dependent magnetoresistance in the quantum transport regime of PbS

Spin-orbit coupling and anomalous angular-dependent magnetoresistance in the quantum transport regime of PbS

The origin of the “high temperature” oscillations of kinetic coefficients of bismuth in the magnetic field

Experimental Studies of Magnetoresistance Tensor Components in Bismuth at Low Temperatures

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