Magnetoresistance behavior in the (BiPb)2Sr2Ca2Cu3Ox thin films

Aksan, M.A.; Yakıncı, M. E.; Güldeste, A.

doi:10.1016/j.tsf.2007.03.059

Cited by 13 publications

(7 citation statements)

References 47 publications

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“…The I-V characteristic of the samples appear as flux creep behavior as obtained for the HT c BSCCO material [45]. The highest J c trans value was calculated to be 60.6 A/cm 2 at zero field and 4.2 K and 19.7 A/cm 2 at 1 T and 4.2 K. When the external field increases, the critical current density, J c trans , decreases in the flux creep regime.…”

Section: I-v Measurementssupporting

confidence: 52%

“…In the thermally activated flux flow (TAFF) region, the thermally activated resistivity is defined as [45], where ρ 0 is the pre-exponent factor, k B the Boltzmann constant and E a the activation energy for the flux motion that generally depends on the temperature, T, the current density, J, and the applied magnetic fields, H. At constant current, the functional dependence of E a (H,T), is believed to give information about the dissipation mechanism and can be calculated from the slope of ln(ρ/ρ 0 ) versus 1/T graphs [45]. Figure 5 shows the E a versus H(T) graphs of the samples FTS-1, FTS-2 and FTS-3.…”

Section: The Activation Energy Calculationsmentioning

confidence: 99%

“…It is also well known that the decrease of the activation energy promotes the thermally activated dissipation due to the vortex motion in a single-crystal sample [45]. In contrast, for polycrystalline superconductors, dissipation begins in intergrain boundaries instead of sample surface or inside the sample.…”

Section: The Activation Energy Calculationsmentioning

confidence: 99%

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Solid state synthesis and characterization of bulk FeTe_0.5Se_0.5superconductors

Onar

Yakıncı

2016

J. Phys.: Conf. Ser.

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Solid state synthesis of chitosan and its unsaturated derivatives for laser microfabrication of 3D scaffolds T A Akopova, T S Demina, V N Bagratashvili et al. K, respectively. The coherence length, , at the zero field, was calculated to be 1.94 nm and suggested a transparent intergrain boundaries peculiarity. The µ 0 H c2 (0)/k B T c rate shows higher value (3.36 T/K) than the Pauli limit (1.84 T/K) which suggests unconventional nature of superconductivity for the polycrystalline FeTe 0.5 Se 0.5 superconducting samples.

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Section: I-v Measurementssupporting

confidence: 52%

Section: The Activation Energy Calculationsmentioning

confidence: 99%

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Solid state synthesis and characterization of bulk FeTe_0.5Se_0.5superconductors

Onar

Yakıncı

2016

J. Phys.: Conf. Ser.

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“…Coherence length (ξ ) and penetration depth (λ) values at the absolute zero temperature are obtained from the upper critical magnetic field and irreversibility field values, respectively. Moreover, activation energy values of the film are calculated using line pinning model and making linear fits to the low resistivity part of the transition [50][51][52][53].…”

Section: Methodsmentioning

confidence: 99%

Effect of Magnetic Field Direction on Magnetoresistivity, Activation Energy, Irreversibility and Upper Critical Field of Bi-2212 Thin Film Fabricated by DC Sputtering Method

Bal

Varılcı

2012

J Supercond Nov Magn

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This study aims to investigate the effect of magnetic field direction on superconducting properties of Bi-2212 thin film fabricated on MgO (100) substrate using the direct current (DC) magnetron reactive sputtering technique at 100 watt with the aid of magnetoresistivity measurements. The zero resistivity transition temperatures (T c ), irreversibility fields (μ 0 H irr ) and upper critical fields (μ 0 H c2 ) are deduced from the magnetoresistivity versus temperature curves under DC magnetic fields (parallel and perpendicular to c-axis) up to 5 T. Moreover, thermally activated flux flow (TAFF) model is studied for activation energy (U 0 ) values of the sample. It is found that the T c value decreases from 76.4 K to 39.1 K for the applied magnetic field perpendicular to c-axis (μ 0 H ⊥c-axis); likewise, the T c reduces towards 28.8 K with the increase in the applied field parallel to c-axis (μ 0 H c-axis). Furthermore, the U 0 values are found to decrease considerably with increasing applied magnetic field. In fact, the U 0 of 134.5 K is obtained to be smallest at 5 T field parallel to the c-axis. Additionally, both the μ 0 H irr and μ 0 H c2 values determined are also observed to reduce with the increase of the applied magnetic field. At absolute zero temperature (T = 0 K), the extrapolation of the μ 0 H irr (T ) and μ 0 H c2 (T ) curves is used to obtain the μ 0 H irr (0) and μ 0 H c2 (0) values of the film, respectively. The inner is found to be about 22.216 T (19.046 T) for the applied field perpendicular (parallel) to c-axis whereas the latter is determined to be about 54.095 T (126.522 T) for the applied field parallel (perpendicular) to c-axis, respectively, as a result of anisotropic behavior of the film prepared. On the other hand, penetration depths (λ) and coherence lengths (ξ ) inferred from μ 0 H irr (0) and μ 0 H c2 (0) values are obtained to be about 38.519 Å (41.601 Å) and 16.147 Å (24.685 Å) in the case of applied field perpendicular (parallel) to c-axis, respectively. Based on all the results, the change of the superconducting properties as a function of the magnetic field direction presents the anisotropy of the sample produced. X-ray diffraction (XRD) and scanning electron microscopy (SEM) examinations are also conducted for microstructural and phase analyses of the film.

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“…After the discovery of superconductivity in Bi-Sr-Ca-Cu-O (BSCCO) high-temperature superconductors [1,2], Bibased thin films are the most promising materials for potential technological (especially microelectronics devices) and industrial applications [3][4][5][6][7][8][9] their remarkable smaller power losses, high current and magnetic field carrying capacity, optical and electronic properties [10][11][12][13][14][15][16][17][18]. Nevertheless, their applications in magnetic fields and high temperatures are restricted because of the structural layer, very low charge carrier density, strong anisotropic properties, extremely short coherence length (ξ ), and large penetration depth (λ).…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Time and Temperature on Microstructural and Superconducting Properties of (Bi,Pb)-2212 Thin Films Produced by Magnetron Reactive Sputtering

Bal

Varılcı

2012

J Supercond Nov Magn

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This study deals with the role of various annealing time (1 h, 2 h, 4 h, 6 h and 8 h) and temperature (840 and 850°C) on the microstructural and superconducting properties of thin films with the aid of scanning electron microscopy (SEM), X-Ray analysis (XRD), electron dispersive X-Ray (EDX), resistivity and transport critical current density (J c ) measurements. The T c , J c , variation of transition temperatures, hole-carrier concentration, grain size, phase purity, lattice parameter, surface morphology, element distribution, crystallinity and resistivity (at room temperature) values of the films prepared are compared with each other. Critical transition temperatures (T c ) of the samples are deduced from the dc resistivity measurement while critical current density values are estimated from the critical current and total cross-sectional area values. It is found that maximum T c of 79.7 K and J c of 1520 A/cm 2 are observed for the film annealed at 840°C for 6 h as against 54.9 K and 30 A/cm 2 (minimum values), respectively, for the film annealed at 840°C for 4 h. Moreover, SEM images indicate that the former has the best crystallinity, grain connectivity and largest grain size. Based on these results, T c and J c values of the samples studied are found to depend strongly on the microstructure. Additionally, EDX results show that the elements used for the preparation of all the samples are observed to distribute homogeneously. As for the XRD results, all the samples exhibit the polycrystalline superconducting phase with the changing intensity This study is devoted to Gulnur Ozdemir on the occasion of her 26th Birthday. of diffraction lines. According to the refinement of cell parameters done by considering the structural modulation, the largest lattice parameter a and c are obtained for the film annealed at 840°C for 8 h. To sum up, the aim of the present study is not only to investigate the changes of microstructural and superconducting properties of the samples fabricated in the varied time and temperature but to determine the best ambient for the film fabrication and show the feasibility of obtaining Bi-2212 film with tailored structure, as well.

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Magnetoresistance behavior in the (BiPb)2Sr2Ca2Cu3Ox thin films

Cited by 13 publications

References 47 publications

Solid state synthesis and characterization of bulk FeTe_0.5Se_0.5superconductors

Solid state synthesis and characterization of bulk FeTe_0.5Se_0.5superconductors

Effect of Magnetic Field Direction on Magnetoresistivity, Activation Energy, Irreversibility and Upper Critical Field of Bi-2212 Thin Film Fabricated by DC Sputtering Method

Effect of Annealing Time and Temperature on Microstructural and Superconducting Properties of (Bi,Pb)-2212 Thin Films Produced by Magnetron Reactive Sputtering

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Magnetoresistance behavior in the (BiPb)2Sr2Ca2Cu3Ox thin films

Cited by 13 publications

References 47 publications

Solid state synthesis and characterization of bulk FeTe0.5Se0.5superconductors

Solid state synthesis and characterization of bulk FeTe0.5Se0.5superconductors

Effect of Magnetic Field Direction on Magnetoresistivity, Activation Energy, Irreversibility and Upper Critical Field of Bi-2212 Thin Film Fabricated by DC Sputtering Method

Effect of Annealing Time and Temperature on Microstructural and Superconducting Properties of (Bi,Pb)-2212 Thin Films Produced by Magnetron Reactive Sputtering

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Solid state synthesis and characterization of bulk FeTe_0.5Se_0.5superconductors

Solid state synthesis and characterization of bulk FeTe_0.5Se_0.5superconductors