Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Xu, Leilei; Feng, Jiafeng; Zhao, Kun; Lv, Weiming; Han, X. F.; Liu, Zhongyuan; Xu, Xin; Huang, He; Zeng, Zhongming

doi:10.1155/2017/9042823

Cited by 12 publications

(10 citation statements)

References 26 publications

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“…Surprisingly, metallic behavior is observed, even in these junctions incorporating flakes of about 6 nm thick. This behavior is already reported in MoS 2 -based MTJs with thinner layers [24]; transition-metal/MoS 2 interfaces [32,33]; and in junctions incorporating other 2D materials, such as WSe 2 [22] or BP [23] with layers of 5-6.5 nm thick, or even in wide band gap h-BN [34]. We show, in our first-principle calculations (see Fig.…”

Section: Resultssupporting

confidence: 85%

“…However, first results on graphene implementation in vertical spin valves have already shown promise for spin filtering or as a protective barrier against oxygen [17,18]. Other 2D materials beyond graphene have recently been studied in this context, including hexagonal boron nitride (h-BN) [19,20], WS 2 [21], WSe 2 [22], black phosphorus (BP) [23], and MoS 2 [24][25][26][27][28][29][30]. Concerning the large family of transition-metal dichalcogenides (TMDCs), promising theoretical calculations were first reported in 2014 by Dolui et al [28].…”

Section: Introductionmentioning

confidence: 99%

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Path to Overcome Material and Fundamental Obstacles in Spin Valves Based on MoS2 and Other Transition-Metal Dichalcogenides

et al. 2019

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Experimental studies on spin valves with exfoliated 2D materials face the main technological issue of ferromagnetic electrode oxidation during the 2Ds integration process. As a twofold outcome, magnetoresistance (MR) signals are very difficult to obtain and, when they finally are, they are often far from expectations. We propose a fabrication method to circumvent this key issue for 2D-based spintronics devices. We report on the fabrication of NiFe/MoS 2 /Co spin valves with mechanically exfoliated multilayer MoS 2 using an in situ fabrication protocol that allows high-quality nonoxidized interfaces to be maintained between the ferromagnetic electrodes and the 2D layer. Devices display a large MR of 5%. Beyond interfaces and material quality, we suggest that an overlooked more fundamental physics issue related to spin-current depolarization could explain the limited MR observed so far in MoS 2-based magnetic tunnel junctions. This points to a path towards the observation of larger spin signals in line with theoretical predictions above 100%. We envision the impact of our work to be beyond MoS 2 and its broader transition-metal dichalcogenides family by opening the way to an accelerated screening of other 2D materials that are yet to be explored for spintronics.

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Section: Resultssupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Path to Overcome Material and Fundamental Obstacles in Spin Valves Based on MoS2 and Other Transition-Metal Dichalcogenides

et al. 2019

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“…Therefore, it was found that with increasing ac current from I = 10 μA to I = 50 μA, the MR value decreased from~− 2.0 to~− 1.71%. This reduction of MR is conventional and due to the spin excitations localized at the interfaces and the local trap states in non-magnetic spacer [13,15,35,36]. At this end, we plotted a graph which presents the MR (%) values of our all types of devices throughout this project and revealed a consistent and repeatable trend as shown in Figure S4.…”

Section: Spin-valve Junction Of Blg/sl-mose 2 Heterostackmentioning

confidence: 66%

“…It realized a newera of magnetic random access memories, magnetic sensors, and basic logic applications as an information vector [6][7][8]. In recentyears, graphene and two-dimensional transition metal dichalcogenides (2D-TMDs) have found widespread novel spintronic applications [9][10][11][12][13][14][15][16]. They have been used widely to determine high magnetoresistance of 2D materials due to their spin-coherence and high spin-orbit coupling [16,17].…”

Section: Introductionmentioning

confidence: 99%

Modulation of Magnetoresistance Polarity in BLG/SL-MoSe2 Heterostacks

et al. 2020

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Two-dimensional (2D) layered materials have an atomically thin and flat nature which makes it an ultimate candidate for spintronic devices. The spin-valve junctions (SVJs), composed of 2D materials, have been recognized as unique features of spin transport polarization. However, the magnetotransport properties of SVJs are highly influenced by the type of intervening layer (spacer) inserted between the ferromagnetic materials (FMs). In this situation, the spin filtering effect at the interfaces plays a critical role in the observation of the magnetoresistance (MR) of such magnetic structures, which can be improved by using promising hybrid structure. Here, we report MR of bilayer graphene (BLG), single-layer MoSe2 (SL-MoSe2), and BLG/SL-MoSe2 heterostack SVJs. However, before annealing, BLG and SL-MoSe2 SVJs demonstrate positive MR, but after annealing, BLG reverses its polarity while the SL-MoSe2 maintains its polarity and demonstrated stable positive spin polarizations at both interfaces due to meager doping effect of ferromagnetic (FM) contacts. Further, Co/BLG/SL-MoSe2/NiFe determines positive MR, i.e., ~ 1.71% and ~ 1.86% at T = 4 K before and after annealing, respectively. On the contrary, NiFe/BLG/SL-MoSe2/Co SVJs showed positive MR before annealing and subsequently reversed its MR sign after annealing due to the proximity-induced effect of metals doping with graphene. The obtained results can be useful to comprehend the origin of polarity and the selection of non-magnetic material (spacer) for magnetotransport properties. Thus, this study established a new paragon for novel spintronic applications.

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“…Along this direction and after some theoretical studies, the first spin valves using MoS 2 thin layer between ferromagnetic electrodes were reported and almost simultaneously, TMR was measured in a MTJ based on mechanically stacked ferromagnetic Fe 0.25 TaS 2 thick flakes . In the last two years some other experimental devices have been prepared based on other transition metal chalcogenides (TMCs), but also new systems as black phosphorous (BP) are starting to be explored . Therefore, given the vast number of properties exhibited by 2D materials, one can foreseen that a variety of new spintronic devices based on 2D layers acting as insulator spacers, semiconductors or active ferromagnetic spin injectors should be reported in the near future.…”

Section: Hybrid Interfaces Using 2d Materialsmentioning

confidence: 99%

Hybrid Interfaces in Molecular Spintronics

Forment‐Aliaga

Coronado

2018

The Chemical Record

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Molecular/inorganic multilayer heterostructures are gaining attention in molecular electronics and more recently in new generation spintronic devices. The intrinsic properties of molecular materials as low cost, tuneability, or long spin lifetimes were the original reasons behind their implementation. However, the non-innocent role played by these hybrid interfaces is a determinant factor in the device performance. In this account we will give an overview about different types of hybrid molecular system/ferromagnet interfaces, which can be of direct application in molecular spintronics. This includes the insertion of a 2D material in between the molecular system and the ferromagnet. As perspective, new hybrid interfaces able to tune the spin properties under an external stimulus, are proposed. These smart interfaces, based on switchable magnetic molecules or flexible MOFs, can open the way to new multifunctional spintronic devices able to couple the spin with a second property.

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Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Cited by 12 publications

References 26 publications

Path to Overcome Material and Fundamental Obstacles in Spin Valves Based on MoS2 and Other Transition-Metal Dichalcogenides

Path to Overcome Material and Fundamental Obstacles in Spin Valves Based on MoS2 and Other Transition-Metal Dichalcogenides

Modulation of Magnetoresistance Polarity in BLG/SL-MoSe2 Heterostacks

Hybrid Interfaces in Molecular Spintronics

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