“…Researches on metal-semiconductor hybrid structure are mainly focused on silicon based, germanium based, ZnTe based, and diluted magnetic semiconductor (DMS) based systems. And the origin of the antiferromagnetic (AF) coupling and magnetoresistance (MR) are intensively investigated [9][10][11][12][13][14][15][16][17][18][19][20][21]. The temperaturedependent sign-changed MR was found in DMS systems, such as V-doped ZnTe [15], Cr-doped ZnTe [16], (Mn,Co)-co-doped ZnO films [17,18], Cr-doped tin-doped indium oxide (ITO) films [19], * Corresponding author.…”