2006
DOI: 10.1016/j.physb.2006.03.042
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Magnetoresistance in Fe and Cu co-doped ZnO thin films

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Cited by 6 publications
(2 citation statements)
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“…3͑d͔͒ at 2.5 K for Zn 0.90 Co 0.10 O single crystals, which is at the upper end of MR values reported by other groups for ZnO-based DMS. [30][31][32]42,43 A positive MR also arises in pristine ZnO crystals below 5 K ͑not shown͒ but it is weaker than in the cobalt-doped crystals, no more than 1% at 2.5 K, which is likely due to residual impurities.…”
Section: Samplementioning
confidence: 99%
“…3͑d͔͒ at 2.5 K for Zn 0.90 Co 0.10 O single crystals, which is at the upper end of MR values reported by other groups for ZnO-based DMS. [30][31][32]42,43 A positive MR also arises in pristine ZnO crystals below 5 K ͑not shown͒ but it is weaker than in the cobalt-doped crystals, no more than 1% at 2.5 K, which is likely due to residual impurities.…”
Section: Samplementioning
confidence: 99%
“…Researches on metal-semiconductor hybrid structure are mainly focused on silicon based, germanium based, ZnTe based, and diluted magnetic semiconductor (DMS) based systems. And the origin of the antiferromagnetic (AF) coupling and magnetoresistance (MR) are intensively investigated [9][10][11][12][13][14][15][16][17][18][19][20][21]. The temperaturedependent sign-changed MR was found in DMS systems, such as V-doped ZnTe [15], Cr-doped ZnTe [16], (Mn,Co)-co-doped ZnO films [17,18], Cr-doped tin-doped indium oxide (ITO) films [19], * Corresponding author.…”
Section: Introductionmentioning
confidence: 99%