Magnetoresistance in point contacts of the Heusler alloy Co2Cr0.6Fe0.4Al

Correlation between the synthesis conditions and the compositional and magnetic properties of Co2(Cr1−xFex)Al Heusler alloys

“…[16,17,22]. Moreover, the T C values reported by different authors in this series of compounds show large variations [10,12]. Our study seems to suggest that a strong correlation exists between the chemical homogeneity at the micrometric level and magnetic properties such as the saturation magnetization and the Curie temperature.…”

“…In this article we study the series of polycrystalline Co 2 (Cr 1−x Fe x )Al full-Heusler alloys, which have received much attention in recent times for their remarkable magnetoresistive properties [10][11][12][13]. In fact, the end-point compounds were already synthesized in the past and some crystallographic and magnetic properties were reported.…”

Antiferromagnetic dipolar ordering in[Co2MnGe∕V]Nmultilayers

“…The maximum TMR values obtained for an Al oxide barrier are 52% at RT and 83% at 5 K [70]. The spin polarization was found to be 81% [71]. The obtained TMR ratio of 83% at 2 K in the MTJ with B2 ordered Co 2 MnAl is large among the MTJs with an amorphous Al oxide tunnel barrier and suggest that B2 ordered Co 2 MnAl still exhibits a high spin polarization [14].…”

Heusler Compounds: Applications in Spintronics

“…They found that the complete spin polarization is retained up to 10 % of CsCltype disorder, while a stronger reduction of the spin polarization occurs for the other types of disorder. Using single point contacts, a spin polarization of 81 % was measured [86]. Galanakis investigated, in addition to the bulk properties, the influence of surface states on the half-metallic properties of Heusler compounds and reported that the CrAl-terminated surface of Co 2 CrAl behaves differently compared to most other Heusler alloys, i.e., that the half-metallic properties are preserved [87].…”

“…Consequently, in pressed powder compacts that act as a series of MTJs, a MR of À30 % was reported in a small external field of 0.1 T. This discovery triggered enormous research efforts focusing on the implementation of this material into spintronic devices [86,120,154,155]. Shortly after that, the first TMR using a B2-ordered sputtered CCFA electrode was reported to be 26.5 % at 5 K (16 % at RT) by Inomata et al [120].…”