Magnetoresistance of 2H−NbSe2

Hambourger, Paul D.; Lewis, N.

doi:10.1016/0038-1098(78)90052-2

Cited by 7 publications

(4 citation statements)

References 14 publications

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“…The shape of the curves remarkably changes from weak-field quadratic below B ≈ 2 T to high-field linear for B ≳ 2 T (solid lines in figure 9(b)), possibly triggered by the CDW order. The anomalous linear dependence on magnetic field strength was already observed for 2H-NbSe 2 single crystals [61,62]. The slope of the linear MR increases from 25 to 8 K by almost a factor of 3.…”

Section: Self-field Critical Current Densitysupporting

confidence: 54%

“…Since linear MR in 2H-NbSe 2 occurs below T CDW it is suggestive that the charge density wave is responsible for the effect. In [61][62][63] it is pointed out that the existence of CDW energy gaps provides a scattering mechanism, and the linear MR has been tentatively attributed to magnetic breakdown of the gaps. R H of the films can be compared to R H of 2H-NbSe 2 single crystals and bilayers.…”

Section: Self-field Critical Current Densitymentioning

confidence: 99%

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Transport properties of 2H-NbSe₂ synthesized by selenization of Nb thin films

Zaitsev,

Beck,

Fuchs

et al. 2023

Supercond. Sci. Technol.

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A novel method for the synthesis of 2H-NbSe2 thin films by selenization of precursor Nb thin films is reported. The polycrystalline films grow predominantly in the hexagonal 2H-NbSe2 phase with bulk lattice constants. Their remarkable microstructure consists of a three-dimensional network of flake-like grains substantially stacked vertically on the substrate. The electronic transport between 1.2 K and 300 K in zero and applied magnetic fields up to 14 T has been extensively studied. The study comprises resistivity, magnetoresistance, Hall coefficient, upper critical field, and critical current density. The results are discussed taking account of the coexisting charge-density-wave and superconducting phases.

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Section: Self-field Critical Current Densitysupporting

confidence: 54%

Section: Self-field Critical Current Densitymentioning

confidence: 99%

Transport properties of 2H-NbSe₂ synthesized by selenization of Nb thin films

Zaitsev,

Beck,

Fuchs

et al. 2023

Supercond. Sci. Technol.

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“…It is distinct from the semiclassical quadratic dependence which is expected from the orbital‐origin. [ 66 ] We note that this linear MR might be a characteristics of quasi 2D CDW materials [ 67–69 ] including LaSb 2 . [ 70,71 ] Analogous to the transition metal dichalcogenides which also show linear MR, [ 68,69 ] variable electron‐phonon coupling along with an imperfect Fermi surface nesting, [ 72 ] open‐orbit Fermi pockets and/or magnetic breakdown in the CDW state [ 68,69 ] can be the possible mechanisms that would play an important role in LnSb 2 .…”

Section: Resultsmentioning

confidence: 99%

“…[66] We note that this linear MR might be a characteristics of quasi 2D CDW materials [67][68][69] including LaSb 2 . [70,71] Analogous to the transition metal dichalcogenides which also show linear MR, [68,69] variable electron-phonon coupling along with an imperfect Fermi surface nesting, [72] open-orbit Fermi pockets and/or magnetic breakdown in the CDW state [68,69] can be the possible mechanisms that would play an important role in LnSb 2 . The quasiparticle scattering mechanism on the fluctuation of the CDW order parameter near the Fermi surface "hot spots," generated by the imperfect nesting, has also been discussed in context of the linear MR in rare-earth tritellurides.…”

Section: Temperature Dependence Of Resistivity and Magnetoresistancementioning

confidence: 99%

Anisotropic and High‐Mobility Electronic Transport in a Quasi 2D Antiferromagnet NdSb₂

Singha,

Yuan,

Lee

et al. 2023

Adv Funct Materials

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Advancements in low‐dimensional functional device technology heavily rely on the discovery of suitable materials which have interesting physical properties as well as can be exfoliated down to the 2D limit. Exfoliable high‐mobility magnets are one such class of materials that, not due to lack of effort, has been limited to only a handful of options. So far, most of the attention has been focused on the van der Waals (vdW) systems. However, even within the non‐vdW, layered materials, it is possible to find all these desirable features. Using chemical reasoning, it is found that NdSb2 is an ideal example. Even with a relatively small interlayer distance, this material can be exfoliated down to few layers. NdSb2 has an antiferromagnetic ground state with a quasi 2D spin arrangement. The bulk crystals show a very large, non‐saturating magnetoresistance along with highly anisotropic electronic transport properties. It is confirmed that this anisotropy originates from the 2D Fermi pockets which also imply a rather quasi 2D confinement of the charge carrier density. Both electron and hole‐type carriers show very high mobilities. The possible non‐collinear spin arrangement also results in an anomalous Hall effect.

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