1996
DOI: 10.1016/0921-4526(96)86774-3
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Magnetoresistance of a lateral contact to a two-dimensional electron gas

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Cited by 5 publications
(4 citation statements)
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“…We already showed in a previous paper that multiple tunneling attempts due to skipping orbits lead to a strong suppression of the contact resistance. 18 This mechanism can thus be used to explain the drop of R c to zero for voltages U dc above 4 mV. In the following model we suggest that also the splitting of the subgap resistance peak can be explained within this framework.…”
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confidence: 82%
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“…We already showed in a previous paper that multiple tunneling attempts due to skipping orbits lead to a strong suppression of the contact resistance. 18 This mechanism can thus be used to explain the drop of R c to zero for voltages U dc above 4 mV. In the following model we suggest that also the splitting of the subgap resistance peak can be explained within this framework.…”
mentioning
confidence: 82%
“…The total number of collisions with the boundary and consequently the resulting effective transmission probability increases with magnetic field. 18 This is the reason for the suppression of R N observed with increasing B Ќ in the measurement shown in Fig. 3.…”
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confidence: 82%
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“…Although mobility in those materials is usually smaller than in Al x Ga 1Ϫx As/GaAs, there is a growing interest in these heterostructures as under certain conditions they do not show a depletion zone at the 2DEG vacuum interface. 13 Especially with respect to hybrid devices consisting of superconductors 14,15 or ferromagnetics 16 in combination with semiconductors, this 2DEG allows the fabrication of nonalloyed Ohmic contacts.…”
Section: Introductionmentioning
confidence: 99%