Ballistic transport of hot electrons was used to characterize the relevant transport lengths in the twodimensional electron gas formed in an In 0.53 Ga 0.47 As/In 0.76 Ga 0.24 As/InP heterostructure. This method allows a distinction between impurity scattering, alloy scattering, and electron-electron scattering. Using adjacent point contacts separated by only a few hundred nanometers, we determine the ballistic mean free path for cold electrons to be approximately L bal ϭ970 nm. Fitting the electron excess energy-dependent peak height of the focusing maxima, good agreement can be obtained by including the energy dependence of ionized impurity scattering. The mean distance between impurities L imp is determined to be approximately 1.2 m and the alloy scattering length L alloy is 4.5 m.