2006
DOI: 10.1063/1.2172232
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Magnetoresistance of atomic-scale electromigrated nickel nanocontacts

Abstract: We report measurements of the electron transport through atomic-scale constrictions and tunnel junctions between ferromagnetic electrodes. Structures are fabricated using a combination of e-beam lithography and controlled electromigration. Sample geometries are chosen to allow independent control of electrode bulk magnetizations. As junction size is decreased to the single channel limit, conventional anisotropic magnetoresistance (AMR) increases in magnitude, approaching the size expected for tunneling magneto… Show more

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Cited by 37 publications
(47 citation statements)
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“…To make the junction suitable for contact by macroscopic probes, two gold electrodes are deposited over the edges of the junction in a second lithography step, following the procedure described in ref. 19 . The samples are then placed in a probe station that was pumped down and immersed in a liquid helium bath until the sample reached a temperature close to 4.2 K. Under these conditions, the controlled electromigration process 14,19 was performed, decreasing the size of the junction to the atomic scale.…”
Section: Appendix A: Methodsmentioning
confidence: 99%
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“…To make the junction suitable for contact by macroscopic probes, two gold electrodes are deposited over the edges of the junction in a second lithography step, following the procedure described in ref. 19 . The samples are then placed in a probe station that was pumped down and immersed in a liquid helium bath until the sample reached a temperature close to 4.2 K. Under these conditions, the controlled electromigration process 14,19 was performed, decreasing the size of the junction to the atomic scale.…”
Section: Appendix A: Methodsmentioning
confidence: 99%
“…For the temperature-dependence measurements, the contacts were produced by the controlled electromigration at 4.2K of 100-nm-wide junctions fabricated by electron beam lithography 19 . In both cases, the spectroscopic curves were obtained by the addition of an a.c. voltage with a peak-power amplitude of 1mV and a frequency of 1 kHz to the d.c. bias voltage to allow the lock-in detection of the differential conductance.…”
Section: Appendix A: Methodsmentioning
confidence: 99%
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“…1,2 The transport counterpart of MAE is anisotropic magnetoresistance ͑AMR͒, i.e., the dependence of the resistance on the angle between the magnetization and the current flow. Whereas AMR in bulk was known back in the 19th century and is a rather small effect, the recent observation of AMR in a variety of low dimensional systems, [3][4][5][6][7][8][9][10][11][12] largely exceeding bulk values, has opened a new research venue in the field of spin-polarized quantum transport. Very large AMR has been reported in planar tunnel junctions ͓tunneling anisotropic magnetoresistance ͑TAMR͔͒ with a variety of electrode and barrier materials.…”
Section: Introductionmentioning
confidence: 99%
“…Very large AMR has been reported in planar tunnel junctions ͓tunneling anisotropic magnetoresistance ͑TAMR͔͒ with a variety of electrode and barrier materials. [3][4][5][6][7][8] Enhanced AMR has also been observed in atomic sized contacts, both in the tunnel regime ͑TAMR͒ and in the contact ͑or ballistic 13 ͒ regime ͓ballistic anisotropic magnetoresistance ͑BAMR͔͒, 14 for Py, 9 Fe, 10 Ni, 11 and Co. 12 Additionally, GaMnAs islands in the Coulomb blockade regime show electrically tunable AMR. 15 Thus, a wide range of nanostructures made from different materials display enhanced AMR.…”
Section: Introductionmentioning
confidence: 99%