2020
DOI: 10.3103/s1062873820050391
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Magnetostriction Nanostructures with a Giant Magnetoresistive Effect for Magnetic Straintronics Devices

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Cited by 5 publications
(4 citation statements)
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“…The used control and measuring equipment included a MESA-200 measuring installation from Shb Instruments (USA) with software for control, programming, remote control and diagnostics, as well as a personal computer with installed software [9,16]. MESA-200 equipment (Figure 1a) allows measuring the magnetic parameters of magnetoresistive structures, as part of silicon wafers up to 200 mm in diameter, in a constant and alternating magnetic field up to 80 kA/m, as well as an inductance field range of 0.01-10,000 nVb/div.…”
Section: Measurement Technology and Methodsmentioning
confidence: 99%
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“…The used control and measuring equipment included a MESA-200 measuring installation from Shb Instruments (USA) with software for control, programming, remote control and diagnostics, as well as a personal computer with installed software [9,16]. MESA-200 equipment (Figure 1a) allows measuring the magnetic parameters of magnetoresistive structures, as part of silicon wafers up to 200 mm in diameter, in a constant and alternating magnetic field up to 80 kA/m, as well as an inductance field range of 0.01-10,000 nVb/div.…”
Section: Measurement Technology and Methodsmentioning
confidence: 99%
“…After studying the nanostructures on the wafer, two types of samples 4 × 20 mm 2 were studied: in the first, the EMA was directed along the long side of the sample; in the second, the EMA was tilted at 45 • to the long side and measuring the magnitude of the AMR effect under conditions of varying mechanical load. The AMR effect was measured by a two-probe method-the unit has a device for creating controlled mechanical deformations in the surface layer of the sample [8,16,21]. The sketch of the main unit of the installation is shown in Figure 2.…”
Section: Measurement Technology and Methodsmentioning
confidence: 99%
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