1989
DOI: 10.1088/0268-1242/4/4/002
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Magnetotransport in 2D semiconductor systems under pressure

Abstract: A review is presented of pressure studies based on measurements of magnetoresistivity and Shubnikov-de Haas oscillations as well as quantum and classical Hall effects, performed on various types of 2D semiconductor systems and demonstrating a variety of effects induced by pressure.

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Cited by 6 publications
(4 citation statements)
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“…This hypothesis is not unreasonable since pressure tunes all band parameters, some of which are discussed in Supplementary Note 1. The quantity changing the most dramatically with pressure is the electron density: it decreases linearly with pressure, reaching at 10 kbar nearly 20% of its value in the ambient [29,35,36]. In Fig.4 we explore the premise of other driving parameters by plotting the nematic onset temperature against pressure, electron density, and magnetic field.…”
Section: Introductionmentioning
confidence: 99%
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“…This hypothesis is not unreasonable since pressure tunes all band parameters, some of which are discussed in Supplementary Note 1. The quantity changing the most dramatically with pressure is the electron density: it decreases linearly with pressure, reaching at 10 kbar nearly 20% of its value in the ambient [29,35,36]. In Fig.4 we explore the premise of other driving parameters by plotting the nematic onset temperature against pressure, electron density, and magnetic field.…”
Section: Introductionmentioning
confidence: 99%
“…At the critical pressure of the paired-to-nematic transition we find κ B,c = 1.63, nearly independent of the filling factor. Here we took into account the pressure dependence of the effective mass and dielectric constant [36]. It is tempting to think of Fig.5 as a phase diagram.…”
Section: Introductionmentioning
confidence: 99%
“…A detailed discussion of the dependence on pressure of these parameters can be found in the Supplement. Decreasing density with an increasing pressure [44] has by far the strongest imprint on these values. We find that in the pressure range P = 8.26 ÷ 9.76 kbar at which the nematic phase is detected, the density ranges between n = 1.0 ÷ 0.68 × 10 11 /cm 2 , the Landau level mixing parameter spans κ = 2.08 ÷ 2.57, and the adimensional layer width spreads over w/l B = 1.51 ÷ 1.24.…”
mentioning
confidence: 99%
“…different PCs. 35 The pressure in the DAC is high enough to achieve Γ-X and Γ-L crossover along with Γ-Γ transition. The non-linear bandgap energy behavior above 4.3 GPa can also be attributed to non-hydrostatic effects at higher pressures connected with the extremely sophisticated doublegasket measuring technique of transmittance spectra (Supplementary Material).…”
mentioning
confidence: 99%