Magnetotransport in thin epitaxial Bi2Se3 films

Oveshnikov, L. N.; Prudkoglyad, V. A.; Nekhaeva, E. I.; Kuntsevich, A. Yu.; Selivanov, Yu. G.; Chizhevskii, E. G.; Аронзон, Б. А.

doi:10.1134/s0021364016210128

Cited by 9 publications

(10 citation statements)

References 22 publications

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“…Growth of Sr-doped Bi 2 Se 3 films on cleaved (1 1 1) BaF 2 substrates was performed in a MBE system EP-1201 with a pressure 3 · 10 −10 Torr during epitaxy [22,28]. Ternary Sr x Bi 2−x Se 3 layers were deposited using standard effusion cells for high purity elemental Se, Sr and binary Bi 2 Se 3 compound.…”

Section: Growth Techniquementioning

confidence: 99%

“…Thin films with different Sr content were obtained by varying the evaporation temperature of the Sr effusion cell. Sr concentration x in the grown films was increased from 0.003 to 0.352 when heating Sr cell from 260 to 380 • C. When growing Bi 2 Se 3 films from elemental Bi and Se sources [18][19][20][21]23] it is inevitable to employ a two-step deposition method due to a weak interaction of Bi and Se ad-atoms with the substrate, with the first step temperature being below 150 • C. Beam flux composition, generated from effusion cell loaded with binary Bi 2 Se 3 compound [22,28,29], consists of Bi-Se molecular species [24], and thin film condensation occurs at the elevated temperatures. So, time consuming low temperature stage becomes unnecessary.…”

Section: Growth Techniquementioning

confidence: 99%

“…Bi 2 Se 3 films are frequently grown by two step procedure on popular substrates such as (111) Si [18,19] and (0001) Al 2 O 3 [20,21], despite large lattice mismatch (7 to 15%) relying on Van-der Waals epitaxy. Several studies successfully used MBE growth of Bi 2 Se 3 films on cleaved (111) BaF 2 substrates with 5% in plane lattice misfit employing two-step [22] or single step [23,24] method. Optically transparent and insulating BaF 2 substrate is handy for transport and spectroscopic studies.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Sr doping on structure, morphology, and transport properties of Bi2Se3 epitaxial thin films

Volosheniuk

Selivanov

Bryzgalov

et al. 2019

Journal of Applied Physics

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We report molecular beam epitaxy growth of Sr-doped Bi 2 Se 3 films on (111) BaF 2 substrate, aimed to realize unusual superconducting properties inherent to Sr x Bi 2 Se 3 single crystals. Despite wide range of the compositions, we do not achieve superconductivity. To explore the reason for that we study structural, morphological and electronic properties of the films and compare them to the corresponding properties of the single crystals. The dependence of the c-lattice constant in the films on Sr content appears to be more than an order of magnitude stronger than in the crystals. Correspondingly, all other properties also differ substantially, indicating that Sr atoms get different positions in lattices. We argue that these structural discrepancies come from essential differences in growth conditions. Our research calls for more detailed structural studies and novel growth approaches for design of superconducting Sr x Bi 2 Se 3 thin films.PACS numbers:

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Section: Growth Techniquementioning

confidence: 99%

Section: Growth Techniquementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Sr doping on structure, morphology, and transport properties of Bi2Se3 epitaxial thin films

Volosheniuk

Selivanov

Bryzgalov

et al. 2019

Journal of Applied Physics

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“…The magnetoconductivity ∆(1/ρ xx )(B) of an analogous undoped Bi 2 Se 3 films was studied previously 6 . It was shown that the negative magnetoconductivity (weak antilocalization), as well as the Shubnikov-de Haas (SdH) oscillations for pure samples are determined only by the magnetic field component perpendicular to the film plane.…”

Section: Magnetoresistance Measurementsmentioning

confidence: 99%

“…−10 Torr, specially designed for the growth of chalcogenide films 6 . For simplicity, we will refer to our doped films as ternary compounds, although structural data suggests highly inhomogeneous distribution of Eu impurities.…”

Section: Samplesmentioning

confidence: 99%

Magnetic and magnetotransport properties of Bi2Se3 thin films doped by Eu

Аронзон

Oveshnikov

Prudkoglyad

et al. 2018

Journal of Magnetism and Magnetic Materials

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Structural, magnetic and magnetotransport properties of (Bi 1−x Eu x ) 2 Se 3 thin films have been studied experimentally as a function of Eu content. The films were synthesized by MBE. It is demonstrated that Eu distribution is not uniform, it enter quint-layers forming inside them plain (pancake-like) areas containing Eu atoms, which sizes and concentration increase with the growth of Eu content. Positive magnetoresistance related to the weak antilocalization was observed up to 15K. The antilocalization was not followed by weak localization as theory predicts for nontrivial topological states. Surprisingly, the features of antilocalization were seen even at Eu content x = 0.21. With the increase of Eu content the transition to ferromagnetic state occurs at x about 0.1 and with the Curie temperature ≈ 8K, that rises up to 64K for x = 0.21. At temperatures above 1-2 K, the dephasing length is proportional to T −1/2 indicating the dominant contribution of inelastic e-e scattering into electron phase breaking. However, at low temperatures the dephasing length saturates, that could be due to the scattering on magnetic ions.

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