2004
DOI: 10.1063/1.1636827
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Magnetotransport properties of hard magnetic pinned multilayers

Abstract: Hard magnetic (HM) thin films have been vertically integrated below giant magnetoresistive (GMR) multilayer sensors in order to shift the operating point of an applicable GMR sensor. The shift in maximum magnetoresistance (MR) peaks was found to be dependent on the thickness of the HM layer. As a result of different bias geometries, which have been tested, current shunting effects mainly reduce the maximum MR amplitudes. A strong microstructural influence on the magnetotransport has been found; meander-shaped … Show more

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Cited by 4 publications
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“…To obtain a high anisotropy and therefore a strong alignment, a high aspect ratio of the GMR structure has to be achieved. For example, for realization of linear transition regions in the range of several mT, the width of the GMR device has to be structured down to sizes of 1 µm and below [ 41 , 42 ]. A configuration which considers these aspects is the arrangement of meander shaped GMR sensors in a Wheatstone bridge [ 43 ].…”
Section: Gmr Systemsmentioning
confidence: 99%
“…To obtain a high anisotropy and therefore a strong alignment, a high aspect ratio of the GMR structure has to be achieved. For example, for realization of linear transition regions in the range of several mT, the width of the GMR device has to be structured down to sizes of 1 µm and below [ 41 , 42 ]. A configuration which considers these aspects is the arrangement of meander shaped GMR sensors in a Wheatstone bridge [ 43 ].…”
Section: Gmr Systemsmentioning
confidence: 99%