2005
DOI: 10.1103/physrevb.72.224436
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Magnetotransport through magnetic domain patterns in permalloy rectangles

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Cited by 19 publications
(10 citation statements)
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“…Unlike in anisotropic magnetoresistance measurements, no contact lines are required which may act as pinning sites for DWs and thus may affect depinning experiments. 14 Controlled pinning and depinning of DWs at constrictions in nanowires are key issues for applications based on the motion and detection of individual walls such as the magnetic race-track memory 15 and logic devices. 16 It has been shown that the field strength required for depinning a DW from a constriction depends on the depth of the constriction [17][18][19][20] as well as on the type of DW that has been pinned.…”
Section: Introductionmentioning
confidence: 99%
“…Unlike in anisotropic magnetoresistance measurements, no contact lines are required which may act as pinning sites for DWs and thus may affect depinning experiments. 14 Controlled pinning and depinning of DWs at constrictions in nanowires are key issues for applications based on the motion and detection of individual walls such as the magnetic race-track memory 15 and logic devices. 16 It has been shown that the field strength required for depinning a DW from a constriction depends on the depth of the constriction [17][18][19][20] as well as on the type of DW that has been pinned.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore the curvatureinduced radial anisotropy distribution and the complexity of possible current paths lead to contributions from anisotropic MR, which are hard to evaluate. 30 For this purpose, sophisticated micromagnetic simulations are required, which lie beyond the scope of this work.…”
Section: Resultsmentioning
confidence: 99%
“…Different magnetization orientations of the domains cause locally varying current densities, which have to be taken into account. Nevertheless, it has been shown that a uniform electrical current density is a good approximation in microstructures, 33 as the AMR ratio is only a few percent. Using this assumption the resistance contribution of the individual domains depends only on the area filling and magnetization orientation.…”
Section: B Hard-axis Magnetization Behaviormentioning
confidence: 98%