Abstract:8 at. % yttria stabilized zirconia (8YSZ), doped with 0.25 at. % Mn, was deposited on a Si (100) substrate using radio frequency magnetron sputtering. The film was characterized by scanning electron microscopy, energy dispersive spectroscopy, and x-ray diffraction (XRD). They were used in order to obtain information regarding the composition and uniformity of the samples, determine their crystal structure, and measure the film thicknesses, respectively. In addition, the kinetics of the YSZ phase growth was inv… Show more
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