Major Implantation‐Induced Defects in Conventional and Rapid Annealed, Silicon Implanted LEC‐Grown GaAs

Abstract

A major deep donor besides EL2 is found in Si implanted GaAs. This level emerges to be an implantation-induced defect and lies at an energy between E~ -0.88 eV and E~ -1.09 eV. The EL2 defect distributions in conventional and rapid thermal annealed samples were also investigated. From the experimental defect distribution data, stress is believed to create dislocations which promote EL2 formation in rapid annealed samples, a stoichiometric process is found to be the major mechanism for creating EL2. The dependence of EL2 on the annealing temperature and implantation fluence are also obtained. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-18 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-18 to IP