Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

Ohori, Daisuke; Chuang, Min-Hui; Asahi, Satoru; Takeuchi, Sou; Murata, Masayuki; Yamamoto, Atsushi; Lee, Ming-Yi; Endo, Kazuhiko; Li, Yiming; Tarng, Jenn‐Hwan; Lee, Yao-Jen; Samukawa, Seiji

doi:10.1109/ojnano.2021.3131165

Cited by 2 publications

(1 citation statement)

References 30 publications

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“…Additionally, the substrate surface is in the shadow of the high-aspect-ratio carbon aperture [23,24]. As a result, the NB can suppress to generate of the etching defects because the high-aspect-ratio carbon aperture electrode prevents UV irradiation [25][26][27][28][29][30]. Thus, the NBE is a both defect-free and anisotropic dry etching, it has the potential to apply good performance for micro-/nano-scale pattern etching [31][32][33], and the reduction of IQE is suppressed [17,27,29,[34][35][36][37].…”

Section: Methodsmentioning

confidence: 99%

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

et al. 2023

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We investigated the etching characteristics of hydrogen iodide (HI) neutral beam etching (NBE) of GaN and InGaN and compared with Cl2 NBE. We showed the advantages of HI NBE vs Cl2 NBE, namely: higher InGaN etch rate, better surface smoothness, and significantly reduced etching residues. Moreover, HI NBE was suppressed of yellow luminescence compared with Cl2 plasma. InClx is a product of Cl2 NBE. It does not evaporate and remains on the surface as a residue, resulting in a low InGaN etching rate. We found that HI NBE has a higher reactivity with In resulting in InGaN etch rates up to 6.3 nm/min, and low activation energy for InGaN of approximately 0.015 eV, and a thinner reaction layer than Cl2 NBE due to high volatility of In- I compounds. HI NBE resulted in smoother etching surface with a root mean square average (rms) of 2.9 nm of HI NBE than Cl2 NBE (rms: 4.3 nm) with controlled etching residue. Moreover, the defect generation was suppressed in HI NBE vs. Cl2 NBE, as indicated by lower yellow luminescence intensity increase after etching. Therefore, HI NBE is potentially useful for high throughput fabrication of μLEDs.

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Section: Methodsmentioning

confidence: 99%

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

et al. 2023

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Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

Harada

Ohori

Endo

et al. 2023

Journal of Applied Physics

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Thermal management has become more critical as semiconductor devices are miniaturized. In metal–oxide–semiconductor field-effect transistors, the problem is the reduction in electron mobility in the channel layer owing to the temperature rise caused by heat generation near the channel-drain region. Focusing on the mean free paths of phonons and electrons in Si, nanostructures of a few 10 nm may only hinder heat propagation without affecting electron transportation. Therefore, inserting nanostructures into the channel layer may prevent a temperature rise and maintain a higher electron mobility. To discuss the relationship between the spacing between the nanopillars (NPs) and the heat generation and carrier behavior of the Si-NP/SiGe composite film, samples with NP spacings of 13, 27, or 47 nm were prepared. We previously confirmed that the thermal conductivity of the Si-NP/SiGe composite film decreased as NP spacing narrowed. The NPs scattered phonon propagation and suppressed heat propagation. However, carrier transport properties such as electrical conductivity, carrier mobility, and carrier lifetime have never been discussed. The laser heterodyne photothermal displacement method was used to examine the effect of nanostructures on carrier mobility and carrier lifetime of Si-NP/SiGe composite films. We observed that the carrier lifetime became longer when the NP spacing was comparable to the electron mean-free path of approximately 27 nm.

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Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

Cited by 2 publications

References 30 publications

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication

Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

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