2015 IEEE 39th Annual Computer Software and Applications Conference 2015
DOI: 10.1109/compsac.2015.136
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Management of Virtual Memory Systems under High Performance PCM-based Swap Devices

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Cited by 6 publications
(4 citation statements)
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“…For decades, the most commonly used page size in memory subsystems is 4KB. There have been attempts to change the page size [1][2][3][4][5], but 4KB is still commonly used. This is closely related to the characteristics of hard disk drive (HDD), which has been the main storage of computer systems.…”
Section: Introductionmentioning
confidence: 99%
“…For decades, the most commonly used page size in memory subsystems is 4KB. There have been attempts to change the page size [1][2][3][4][5], but 4KB is still commonly used. This is closely related to the characteristics of hard disk drive (HDD), which has been the main storage of computer systems.…”
Section: Introductionmentioning
confidence: 99%
“…With the rapid enhancement of NVRAM technologies like PRAM (phase-change random access memory) and STT-RAM (spin-transfer torque random access memory) [1,2,3,4], it is expected that NVRAM will be used in the memory and storage hierarchies of future cloud servers [5,6,7]. In this article, we perform empirical analysis to see how much performance improvement can be expected if we supplement NVRAM as an additional component of cloud storage.…”
Section: Introductionmentioning
confidence: 99%
“…CRAW separately maintains CLOCK lists for read and write operations to consider the different eviction cost of the two operations [16]. CLOCK-W behaves identical to CLOCK except for the use of dirty bits instead of reference bits in order to consider the recency of write operations [3]. We can classify the aforementioned policies into two groups.…”
Section: Performance Evaluationsmentioning
confidence: 99%
“…However, PCM has weaknesses to substitute DRAM memory in its entirety as its access time is relatively slower compared to DRAM and it has limited write endurance of 10 6 -10 8 . Thus, PCM is recently considered as a high-speed secondary storage medium as well as far memory that is to be used along with DRAM [3][4][5].…”
Section: Introductionmentioning
confidence: 99%