Managing power semiconductor obsolescence by press-pack IGBT substitution

Golland, A.; Wakeman, F.; Li, G.

doi:10.1109/epe.2005.219427

Cited by 8 publications

(3 citation statements)

References 2 publications

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“…The press-pack technology has been widely used for manufacturing Injection Enhanced Gate Transistors (IEGTs), Integrated Gate Commutated Thyristors (IGCTs), Gate Turn-off Thyristors (GTOs), high power diodes, etc. IGBTs are preferred over the mentioned semiconductor devices in high switching frequency applications due to their lower switching losses [18]. Fig.…”

Section: High Power Igbt Failure Mechanismsmentioning

confidence: 99%

Modeling lifetime of high power IGBTs in wind power applications - An overview

Busca

2011

2011 IEEE International Symposium on Industrial Electronics

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The wind power industry is continuously developing bringing to the market larger and larger wind turbines. Nowadays reliability is more of a concern than in the past especially for the offshore wind turbines since the access to offshore wind turbines in case of failures is both costly and difficult. Lifetime modeling of future large wind turbines is needed in order to make reliability predictions about these new wind turbines early in the design phase. By doing reliability prediction in the design phase the manufacturer can ensure that the new wind turbines will live long enough. This paper represents an overview of the different aspects of lifetime modeling of high power IGBTs in wind power applications. In the beginning, wind turbine reliability survey results are briefly reviewed in order to gain an insight into wind turbine subassembly failure rates and associated downtimes. After that the most common high power IGBT failure mechanisms and lifetime prediction models are reviewed in more detail.

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Section: High Power Igbt Failure Mechanismsmentioning

confidence: 99%

Modeling lifetime of high power IGBTs in wind power applications - An overview

Busca

2011

2011 IEEE International Symposium on Industrial Electronics

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“…Press-pack IGBT (PPI) is very suitable for high power applications such as electric locomotive traction and large current pulse generator, due to the advantages of the high voltage, large current, low control power, high switching speed, the double-plate heat dissipation and so on. In addition, PPI has the characteristics of short circuit failure, especially suitable for redundant design, so PPI is also an ideal device for high voltage direct current (HVDC) [1]. It is of great significance to establish a practical and accurate IGBT model for the the electrical performance optimization of the device and the safe and reliable operation of the equipment.…”

Section: Introductionmentioning

confidence: 99%

A Modeling Method of Press-Pack IGBT from Chip-level to Module-level

Sun¹,

Cui²,

Chen³

et al. 2018

Proceedings of the 2018 3rd International Conference on Electrical, Automation and Mechanical Engineering (EAME 2018)

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In press-pack IGBT the currents flowing through paralleled chips are not consistent due to the packaging structure, chip difference, uneven stress distribution and so on. The maximum current overshoot and maximum junction temperature of the internal paralleled chips determine the limitation of the device's application. A hierarchical modeling method based on the geometry structure of press-pack IGBT is proposed in this paper, and a relatively more accurate device model is established, which provides a reliable and practical modeling method for analyzing electrical characteristics of internal branches under different operating conditions. First of all, according to the data sheet or test results, the chip behavior model is built by Saber software; Secondly, parameter extracting software is used to extract the packaging parasitic parameters and the equivalent circuit network is established; Finally, considering the application environment of press-pack IGBT, a nonlinear resistor is introduced to simulate the piezoresistive effect of a semiconductor and the change of component contact resistance caused by stress. The comparison with test data shows that the model is in good agreement with the test results in key parameters and has high precision. Simulation and test results prove the validity of the model and the feasibility of the modeling method.

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“…Maturity, flexibility and low cost are main factors which explain the large use of this technology [2]. However, new topologies and organizations of power devices are investigated, for example with the use of new chip generations [3] [4].…”

Section: Introductionmentioning

confidence: 99%

A Busbar Like Power Module Based On 3D Chip On Chip Hybrid Integration

Vagnon

Jeannin

Avenas

et al. 2009

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition

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The paper focuses on a new generation of power modules, trying to optimize the tradeoff between thermal and EMI managements. At the same time, the packaging approach is considered in order to simplify the implementation of the power dies while improving the reliability of the structure. The approach considers the hybrid integration of the power dies, one on top of the other into a 3D Chip On Chip configuration. Thanks to this structure, the power dies can be directly inserted within electrical plates, the whole structure emulating a busbar like power module. The paper presents the characteristics and the benefits of the approach. Then, it focuses on the practical characterization of two prototypes: a buck converter structure and a full bridge, single phase diode rectifier. Both of them are based on double sided thermal cooling and electro-thermal contacts are obtained by pressure. The prototypes exhibit great performances while offering really reduced parasitic and EMI coupling.

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Managing power semiconductor obsolescence by press-pack IGBT substitution

Cited by 8 publications

References 2 publications

Modeling lifetime of high power IGBTs in wind power applications - An overview

Modeling lifetime of high power IGBTs in wind power applications - An overview

A Modeling Method of Press-Pack IGBT from Chip-level to Module-level

A Busbar Like Power Module Based On 3D Chip On Chip Hybrid Integration

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