2018
DOI: 10.1021/acs.jpcc.7b10277
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Manganese(II) Molecular Sources for Plasma-Assisted CVD of Mn Oxides and Fluorides: From Precursors to Growth Process

Abstract: A viable route to manganese-based materials of high technological interest is plasma-assisted chemical vapor deposition (PA-CVD), offering various degrees of freedom for the growth of high-purity nanostructures from suitable precursors. In this regard, fluorinated β-diketonate diamine Mn(II) complexes of general formula Mn(dik)2·TMEDA [TMEDA = N,N,N′,N′-tetramethylethylenediamine; Hdik = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (Hhfa), or 1,1,1-trifluoro-2,4-pentanedione (Htfa)] represent a valuable option in t… Show more

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Cited by 38 publications
(68 citation statements)
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“…; 4.7 eV) 2,15,18,33,52. In a different way, at 400°C the Mn 2p spectrum (BE(Mn 2p 3/2 ) = 642.3 eV) and the Mn 3s band spacing(5.4 eV) were in line with the presence of Mn 2 O 3 .…”
mentioning
confidence: 87%
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“…; 4.7 eV) 2,15,18,33,52. In a different way, at 400°C the Mn 2p spectrum (BE(Mn 2p 3/2 ) = 642.3 eV) and the Mn 3s band spacing(5.4 eV) were in line with the presence of Mn 2 O 3 .…”
mentioning
confidence: 87%
“…PE-CVD growth processes were performed using a two-electrode custom-built apparatus equipped with a radio frequency (RF) generator (ν = 13.56 MHz), adopting Mn(tfa) 2 ·TMEDA (tfa = 1,1,1-trifluoro-2,4-pentanedionate; TMEDA = N,N,N′,N′tetramethylethylenediamine) as a precursor. 52 Fluorine-doped tin oxide (FTO)-coated glass substrates (Aldrich®; ≈7 Ω sq −1 ; FTO thickness ≈600 nm), subjected to an established precleaning procedure, 53 were mounted on the grounded electrode, whereas RF-power was delivered to the second electrode. Electronic grade Ar and O 2 were used as plasma sources.…”
Section: Synthesismentioning
confidence: 99%
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“…The equations of motion from the CP Lagrangean were integrated with a time step of 5 au and an inertia parameter for the wavefunction coefficients of 500 au. Such FPMD parameters properly described the dynamics of zeolite hybrids (Fois et al 2010b(Fois et al , 2012Zhou et al 2013), the high-pressure behaviour of zeolites (Ferro et al 2002;Ceriani et al 2004;Fois et al 2005Fois et al , 2008dBetti et al 2007;Gatta et al 2016; Fois and Tabacchi 2019) and high-temperature processes of oxide porous materials and interfaces (Fois et al 2003(Fois et al , 2008a(Fois et al , 2010aTabacchi et al 2014aTabacchi et al , 2016aTabacchi et al , 2007Barreca et al 2011Barreca et al , 2018Deiana et al 2013Deiana et al , 2016Martínez-Suarez et al 2015;Kraus and Frank 2017). Apart from the cell parameters (that were kept fixed along the simulation), no constraints were imposed to the atomic positions, i.e.…”
Section: Computational Setupmentioning
confidence: 99%