Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1−xMnxN

Fenwick, William E.; Asghar, Ali; Gupta, Sanju; Kang, Hye-Won; Straßburg, Martin; Dietz, N.; Graham, Samuel; Kane, Matthew H.; Ferguson, Ian T.

doi:10.1116/1.2201052

Cited by 5 publications

(3 citation statements)

References 30 publications

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“…In the (Ga,Mn)N sample, however, Mn forms a deep level in the band gap of GaN [18,19] and could not contribute to the large increase in the electron concentration. In the meantime, there is evidence that the V N increase with Mn ions doped into GaN [20,21]. Therefore, we can presume that the additional V N in the doped sample gives rise to an increase in the carrier concentration, which will be further confirmed in the following sessions.…”

Section: Resultssupporting

confidence: 52%

Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD

Yang¹,

Chen²,

Wang³

et al. 2008

J. Phys. D: Appl. Phys.

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We have investigated the effects of nitrogen vacancies (VN) induced by Mn doping on the electronic structure and transport properties of (Ga,Mn)N films grown by metal organic chemical vapour deposition (MOCVD). The significant increase in n-type carrier concentration in the (Ga,Mn)N film is attributed to the additional VN induced by Mn doping. Temperature-dependent Hall data indicate that the additional VN is the dominant scattering mechanism in the (Ga,Mn)N film in higher temperature regions. The Mn L2,3 x-ray absorption spectra of the (Ga,Mn)N film shows a multiplet structure, indicating that the Mn ions are present mainly in the Mn2+(d5) states. These can be attributed to the electrons transferring from VN, which is well consistent with the electrical properties. An energy level model involving the charge transfer is proposed to explain the observed electronic structure and transport properties in the system.

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Section: Resultssupporting

confidence: 52%

Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD

Yang¹,

Chen²,

Wang³

et al. 2008

J. Phys. D: Appl. Phys.

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“…Concerning the growth aspect, we witness a formidable effort devoted to the optimization of, e.g., epitaxial growth techniques and procedures like molecular beam epitaxy (MBE) and metalorganic vapour phase epitaxy (MOVPE). In this respect, the meticulous control of the deposition parameters is expected to lead to the exact assessment of critical physical factors like, e.g., the solubility limit of the magnetic ions into the semiconductor matrix [23], the incorporation of electrically active acceptors [69] and the determination of the limiting factors in the case of co-doping TM/RE-acceptors/donors [70]. In this perspective, the importance of a careful in situ and real-time control of the deposition steps via electron diffraction and optical techniques has been recently increasingly underlined [23,71,72].…”

Section: Growth Methodsmentioning

confidence: 99%

“…The slight excess of metal components in the growth process compared to the undoped GaN growth and the incorporation of Mn deep acceptor levels are believed to promote the formation of N vacancies likely to generate shallow donor complexes and thus to contribute to selfcompensation. It has been argued that these electronic defects may be detrimental to the expected ferromagnetic ordering [70,100]. Other authors report the precipitation of Mn 3 N 2 and Mn 6 N 2.58 for GaN epilayers grown on sapphire substrates by MOVPE followed by Mn + ion implantation and annealing, as assessed by XRD [101].…”

Section: Mn Dopingmentioning

confidence: 99%

Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths

Bonanni

2007

Semicond. Sci. Technol.

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This review summarizes the state-of-the-art in the search for room temperature ferromagnetic semiconductors based on transition-metal-and rare-earth-doped nitrides. The major methods of synthesis are reported, together with an overview of the magnetic, structural, electrical and optical characterization of the materials systems, where available. The controversial experimental results concerning the actual value of the apparent Curie temperature in magnetically doped nitrides are highlighted, the inadequacy of standard characterization methods alone and the necessity of a possibly exhaustive structural investigation of the systems are proven and underlined. Furthermore, the dependence on the fabrication parameters of the magnetic ions incorporation into the semiconductor matrix is discussed, with special attention to the fundamental concepts of solubility limit and spinodal decomposition. It is argued that high-temperature ferromagnetic features in magnetically doped nitrides result from the presence of nanoscale regions containing a high concentration of the magnetic constituents. Various functionalities of these multicomponent systems are listed. Moreover, we give an extensive overview on the properties of single magnetic-impurity states in the nitride host. The understanding of this limit is crucial when considering the most recent suggestions for the control of the magnetic ion distribution-and consequently of the magnetic response-through the Fermi level engineering as well as to indicate roads for achieving high-temperature ferromagnetism in the systems containing a uniform distribution of magnetic ions.

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Structural and magnetic properties of Dy-implanted GaN films

Wang

Xie

Liu

et al. 2017

Journal of Alloys and Compounds

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Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1−xMnxN

Cited by 5 publications

References 30 publications

Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD

Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD

Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths

Structural and magnetic properties of Dy-implanted GaN films

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