Manganese on various lattice sites in (Ga,Mn)As investigated using electron paramagnetic resonance

Weiers, T.

doi:10.1103/physrevb.73.033201

Cited by 11 publications

(4 citation statements)

References 26 publications

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“…20 Very recently EPR spectra from variously doped and grown samples of Mn-doped epitaxial GaAs have allowed to identify the presence of ionized Mn interstitials at concentrations as low as 0.5%, although not providing details about the specific local environment of the interstitial site. 28 Recent X-ray absorption near edge structure (XANES) and extended x-ray absorption fine structure (EXAFS) spectra in Mn δ-doped GaAs samples suggest that Mn occupy not only substitutional Ga sites but also interstitial sites, mainly in case of Be co-doping. 29 Cross-sectional Scanning Tunneling Microscopy (XSTM) allows a direct imaging of the electronic states and can be used to characterize the impurities near the cleavage surface.…”

Section: Introductionmentioning

confidence: 99%

Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces

Stroppa¹,

Duan²,

Peressi³

et al. 2007

Phys. Rev. B

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We present a combined experimental and computational study of the (110) cross-sectional surface of Mn δ-doped GaAs samples. We focus our study on three different selected Mn defect configurations not previously studied in details, namely surface interstitial Mn, isolated and in pairs, and substitutional Mn atoms on cationic sites (Mn Ga ) in the first subsurface layer. The sensitivity of the STM images to the specific local environment allows to distinguish between Mn interstitials with nearest neighbor As atoms (Int As ) rather than Ga atoms (Int Ga ), and to identify the fingerprint of peculiar satellite features around subsurface substitutional Mn. The simulated STM maps for Int As , both isolated and in pairs, and Mn Ga in the first subsurface layer are consistent with some experimental images hitherto not fully characterized.

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Section: Introductionmentioning

confidence: 99%

Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces

Stroppa¹,

Duan²,

Peressi³

et al. 2007

Phys. Rev. B

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“…№ N total manganese (cm -3 ) Concentration (cm 2.0xl0 16 2.4xl0 -3 1.0x10 -3 >10 5 2 l.lx l0 18 l.0 x l0 18 l.0xl0 17 4.6x10 -4 2.0xl0 -3 >10 5 3 2.0xl0 17 l.0 x l0 16 1.9xl0 17 -З.0х10 -3 >10 5 4…”

Section: Dependence Of the Intensity Of Esr Lines On Impurities Conce...unclassified

“…Studies of the electronic structure of defects arising in gallium arsenide doped by manganese have continued for more than fifty years [8][9][10][11][12][13][14][15][16][17][18][19]. It is necessary to note works seeking to investigating of a time depended processes in the system, separately [18,19].…”

Section: Introductionmentioning

confidence: 99%

About anomalous g factor value of Mn-related defects in GaAs:Mn

Yakubenya

Shtel’makh

2016

Appl Magn Reson

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Abstract. The results of experimental investigations of ESR spectra of manganese impurity ions in a GaAs : Mn system are presented. The studies are done for various a Fermi level position relative to valence band edge in the system. Characteristic defects for the system that give rise to lines with g factors of 5.62 and 2.81 in the ESR spectra are studied in some detail. The experimental results are discussed in the framework of a previously developed model with a double defect involving the impurity ion. The "3d 5 + hole" model is a special case of the double defect model in this system. An analytical expression for the covalent renormalization of the g factor of an ESR line in this system is obtained.

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“…Let us note that recently detailed investigations focused on the configuration of substitutional and interstitial Mn impurities in (Ga,Mn)As have been performed with cross-sectional scanning tunneling microscopy (XSTM) 26 and electron paramagnetic resonance (EPR) 27 .…”

Section: Introductionmentioning

confidence: 99%

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Goncharuk,

Smrcka,

Kucera

et al. 2008

Preprint

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This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial positions. We have performed quantitative component analysis of experimental spectra collected on the (Ga,Mn)As samples before/after annealing and etching, with the aim to determine the proportion of Mn impurity configurations. Comparison of the experimental data with theoretical computations indicates that even after annealing and etching some Mn atoms still reside in interstitial sites, although the concentration of interstitial defects has been reduced by annealing.

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Manganese on various lattice sites in (Ga,Mn)As investigated using electron paramagnetic resonance

Cited by 11 publications

References 26 publications

Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces

Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces

About anomalous g factor value of Mn-related defects in GaAs:Mn

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

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