Manganite thin film/ZnO nanowire (nanosheets) p-n junctions

Abstract

We have fabricated p-type La0.7Sr0.3MnO3 thin film/n-type ZnO nanowires (nanosheets) heterostructures. A lower-temperature growth with Zn source and a higher-temperature growth with ZnO/graphite source led to the formations of nanowires and nanosheets, respectively. While the nanosheets showed an epitaxial relationship with the manganite film, the high processing temperature resulted in interfacial diffusion and reaction, which were reflected in the x-ray diffraction, magnetic, and electrical transport measurements. The manganite thin film/ZnO nanowires (nanosheets) p-n junctions exhibited good rectification behaviors. Such heterostructures are promising to find potential applications in electronic and spintronic devices.

Morphology and photoluminescence properties of ZnO nanostructures fabricated with different given time of Ar

“…Yang et al made a ZnO nanowire array for ultraviolet laser and a dendritic nanowire for ultraviolet laser array [5][6]. Wang et al [8] reported on single-crystal nanobelts [1], nanorings [3] and bicrystalline ZnO nanowires. However, there are some problems of growth and optical properties that need further study.…”

“…As a wide band gap (3.37 eV at room temperature) semiconductor with large exciton binding energy of 60 meV, ZnO is a promising material for electronic and optical devices [1][2][3][4][5][6][7][8]. In recent years, one-dimensional (1D) ZnO nanostructures have attracted extraordinary attention for their potential applications in device and interconnect integration in nanoelectronics and molecular electronics [9][10][11][12].…”

“…Three samples labeled as a, b and c were synthesized with different supply time of the Ar, which is corresponding to 30, 90 and 180 s, respectively. In the process, due to Si substrate was above the mixture, the Ar just adjusted to the ambient gas composition in the furnace, which was differernt from the vapor phase transport process [8].…”

Ordered dispersion of ZnO quantum dots in SiO2 matrix and its strong emission properties

“…Recently, the properties of the materials in the form of nanostructures have attracted much attention due to the opportunity to investigate the fundamental concepts of quantum mechanics and their various potential applications such as light emitting devices [1], nanoelectronics [2][3][4], including chemical sensors [5]. II-VI semiconductor nanostructures are the most popularly used ones in the optoelectronics [6,7].…”

Correlated d ferromagnetism and photoluminescence in undoped ZnO nanowires

“…The experimental setup was described in previous reports. [10][11][12][13] Typically, ZnO or Zn powder was used as the source, and argon mixed with 5% oxygen was used as the carrying gas. Silicon substrates were sputtered with 2 nm Au or Ag film as the catalyst before being placed downstream 5-6 cm away from the source.…”