Manipulating a domain wall in (Ga,Mn)As

Holleitner, Alexander W.; Knotz, H.; Myers, Roberto C.; Gossard, A. C.; Awschalom, D. D.

doi:10.1063/1.1849055

Cited by 2 publications

(2 citation statements)

References 12 publications

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“…These parameters are externally tunable for utilizing the interacting DWs as a versatile radiation source. For an experimental realization magnetic semiconductors 7,28,37,38,39,40 are favorable, our results are in the range already achievable 7 . Extension to the metallic case is straightforward, though DW lengths may not be easily fabricated on the required scale.…”

Section: Numerical Examplessupporting

confidence: 65%

Current-induced interactions of multiple domain walls in magnetic quantum wires

2009

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We show that an applied charge current in a magnetic nanowire containing domain walls ͑DWs͒ results in an interaction between DWs mediated by spin-dependent interferences of the scattered carriers. The energy and torque associated with this interaction show an oscillatory behavior as a function of the mutual DW orientations and separations, thus affecting the DWs' arrangements and shapes. Based on the derived DWs interaction energy and torque we calculate DW dynamics and uncover potential applications of interacting DWs as a tunable nanomechanical oscillator. We also discuss the effect of impurities on the DW interaction.

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Section: Numerical Examplessupporting

confidence: 65%

Current-induced interactions of multiple domain walls in magnetic quantum wires

2009

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“…Multidomain patterns have been observed in a number of systems with in-plane [29] and out-of-plane magnetization [30,31,32,33,63,64,65,66]. Particularly, isolated domain walls trapped in micropatterned constrictions of (Ga,Mn)As films demonstrate a number of remarkable properties [67,68,69,70] and can be used in differerent nanoelectronic devices (e. g. as magnetoresistive elements) [67]. The fine structure of the isolated domain wall is of prime importance when different types of domain walls are observed [71].…”

Section: Multidomain Patternsmentioning

confidence: 99%

Phenomenological theory of magnetization reversal in nanosystems with competing anisotropies

Leonov

Rößler

Bogdanov

2008

Journal of Applied Physics

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The interplay between intrinsic and surface/interface-induced magnetic anisotropies strongly influences magnetization processes in nanomagnetic systems. We develop a micromagnetic theory to describe the field-driven reorientation in nanomagnets with cubic and uniaxial anisotropies. Spin configurations in competing phases and parameters of accompanying multidomain states are calculated as functions of the applied field and the magnetic anisotropies. The constructed magnetic phase diagrams allow to classify different types of the magnetization reversal and to provide detailed analysis of the switching processes in magnetic nanostructures. The calculated magnetization profiles of isolated domain walls show that the equilibrium parameters of such walls are extremely sensitive to applied magnetic field and values of the competing anisotropies and can vary in a broad range. For nanolayers with perpendicular anisotropy the geometrical parameters of stripe domains have been calculated as functions of a bias field. The results are applied to analyse the magnetization processes as observed in various nanosystems with competing anisotropies, mainly, in diluted magnetic semiconductor films (Ga,Mn)As. 75.50.Ee,

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Manipulating a domain wall in (Ga,Mn)As

Abstract: Influence of low temperature annealing on the micromagnetic structure of GaMnAs films J. Appl. Phys. 95, 3225 (2004); 10.1063/1.1643197Epitaxial growth and properties of III-V magnetic semiconductor (GaMn)As and its heterostructures

Cited by 2 publications

References 12 publications

Current-induced interactions of multiple domain walls in magnetic quantum wires

Current-induced interactions of multiple domain walls in magnetic quantum wires

Phenomenological theory of magnetization reversal in nanosystems with competing anisotropies

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