g-C
3
N
4
-based materials show potential for
photoreduction of CO
2
to oxygenates but are subjected to
fast recombination of photogenerated charge carriers. Here, a novel
Cu-dispersive protonated g-C
3
N
4
(PCN) metal-semiconductor
(m-s) heterojunction from thermal reduction of a Cu
2
O/PCN
precursor was prepared and characterized using in situ X-ray diffraction,
scanning transmission electron microscopy, X-ray photoelectron spectroscopy,
ultraviolet–visible (UV–vis) spectra, photoluminescence
(PL) spectra, transient photocurrent response, and electrochemical
impedance spectroscopy (EIS). The Cu amount in Cu/PCN and the reduction
temperature affected the generation of CH
3
OH and C
2
H
5
OH from the photoreaction of CO
2
-aerated
H
2
O. During calcination of Cu
2
O/PCN in N
2
at 550 °C, Cu
2
O was completely reduced to
Cu with even dispersion, and a m-s heterojunction was obtained. With
thermal exfoliation, Cu/PCN showed a specific surface area and layer
spacing larger than those of PCN. Cu/PCN-0.5 (12.8 wt % Cu) exhibited
a total carbon yield of 25.0 μmol·g
–1
under UV–vis irradiation for 4 h, higher than that of Cu
2
O/PCN (13.6 μmol·g
–1
) and PCN
(6.0 μmol·g
–1
). The selectivity for CH
3
OH and C
2
H
5
OH was 51.42 and 46.14%,
respectively. The PL spectra, transient photocurrent response, and
EIS characterizations indicated that Cu/PCN heterojunction promotes
the separation of electrons and holes and suppresses their recombination.
The calculated conduction band position was more negative, which is
conducive to the multielectron reactions for CH
3
OH and
C
2
H
5
OH generation.