Manipulating Dirac States in BaNiS₂ by Surface Charge Doping

Abstract

In the Dirac semimetal BaNiS 2 , the Dirac nodes are located along the Γ−M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ−M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS 2 single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.

3D Dirac Semimetal Supported Tunable Multi‐Frequency Terahertz Metamaterial Absorbers

“…[22][23][24][25] Similar to graphene membranes, the complex conductivity of 3D DSM can also be dynamically modulated by changing the Fermi level, via external bias voltage, optical pump light, or magnetic fields. [26][27][28] Furthermore, compared with graphene, 3D DSM has several favorable properties, including higher carrier mobility and a stronger ability to resist interference from the dielectric environment. [29][30][31][32] Therefore, 3D DSM is very suitable for the development of tunable devices.…”