2021
DOI: 10.1021/acsnano.1c08212
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Manipulating Edge Current in Hexagonal Boron Nitride via Doping and Friction

Abstract: We map spatially correlated electrical current on the stacking boundaries of pristine and doped hexagonal boron nitride (hBN) to distinguish from its insulating bulk via conductive atomic force microscopy (CAFM). While the pristine edges of hBN show an insulating nature, the O-doped edges reveal a current 2 orders of higher even for bulk layers where the direct transmission through tunnel barrier is implausible. Instead, the nonlinear current–voltage characteristics (I–V) at the edges of O-doped hBN can be exp… Show more

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Cited by 7 publications
(5 citation statements)
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“…The second reason is tied to the attachment of nanotube ends and graphene edges in this work in contrast to other reports, where CNTs are randomly attached to edges or basal planes of graphenes. , In the random attachment, CNTs connected to the basal plane through epoxide ring–opening reaction are approximately perpendicular to graphene’s surface at the junction point, and graphene serves effectively as the transport insulator in the perpendicular direction of the basal plane . Moreover, resulting from the enhanced spatially localized density of states near the graphene edges, the electrical conductivity of edges is typically higher than that of the surface in graphene . Consequently, compared to the edge junctions, connections to the basal planes have a higher potential barrier and cannot perfectly enhance the conductive network.…”
Section: Resultsmentioning
confidence: 89%
See 1 more Smart Citation
“…The second reason is tied to the attachment of nanotube ends and graphene edges in this work in contrast to other reports, where CNTs are randomly attached to edges or basal planes of graphenes. , In the random attachment, CNTs connected to the basal plane through epoxide ring–opening reaction are approximately perpendicular to graphene’s surface at the junction point, and graphene serves effectively as the transport insulator in the perpendicular direction of the basal plane . Moreover, resulting from the enhanced spatially localized density of states near the graphene edges, the electrical conductivity of edges is typically higher than that of the surface in graphene . Consequently, compared to the edge junctions, connections to the basal planes have a higher potential barrier and cannot perfectly enhance the conductive network.…”
Section: Resultsmentioning
confidence: 89%
“…62 Moreover, resulting from the enhanced spatially localized density of states near the graphene edges, the electrical conductivity of edges is typically higher than that of the surface in graphene. 63 Consequently, compared to the edge junctions, connections to the basal planes have a higher potential barrier and cannot perfectly enhance the conductive network.…”
Section: Analysis Of Electrical Conductivitymentioning
confidence: 99%
“…[70,71] Trap-assisted tunneling (TAT) arises when defect trap states are abundant in the depletion region and become involved in the tunneling process Carriers may tunnel through the occupied trap state into the other side of the junction, and transport to the electrode subsequently contribute to the increase in dark current. [72,73] For a parabolic barrier with a uniform electric field, the tunneling current via mid-gap states can be expressed by the following equation. [69] I TAT =…”
Section: Dark Current Composition and Generation Mechanisms In Photod...mentioning
confidence: 99%
“…[ 70,71 ] Trap‐assisted tunneling (TAT) arises when defect trap states are abundant in the depletion region and become involved in the tunneling process Carriers may tunnel through the occupied trap state into the other side of the junction, and transport to the electrode subsequently contribute to the increase in dark current. [ 72,73 ] For a parabolic barrier with a uniform electric field, the tunneling current via mid‐gap states can be expressed by the following equation. [ 69 ] ITATbadbreak=()2π2q2me*M2ENtWh3Egexp[]π2Eg3/2()me*21/22qEh$$\begin{equation} {I}_{\textit{TAT}}=\left(\frac{2{\pi}^{2}{q}^{2}{m}_{e}^{\ast}{M}^{2}E{N}_{t}W}{{h}^{3}{E}_{g}}\right)\exp \left[-\frac{{\pi}^{2}{E}_{g}^{3/2}{\left(\frac{{m}_{e}^{\ast}}{2}\right)}^{1/2}}{2\textit{qEh}}\right] \end{equation}$$where N t is the density of mid‐gap traps and M is a matrix element associated with the trap potential.…”
Section: Composition and Generation Mechanism Of Dark Current In Ir P...mentioning
confidence: 99%
“…A thinner multilayer hBN at the left corner of Figure a (mainly ∼78 nm thick, yellow) has a reduced PL emission, especially when excited at 546 nm. This could be related to PL quenching from charges in the SiO 2 surface via the strongly doped oxygen atoms as detected in the TOF-SIMS and XPS measurements. …”
mentioning
confidence: 97%