Manipulating Strain in Transistors: From Mechanically Sensitive to Insensitive

Li, Ming‐Zheng; Guo, Liangchao; Liu, Gang; Yan, Yan; Zhang, Meng; Han, Su‐Ting; Zhou, Ye

doi:10.1002/aelm.202101288

Cited by 4 publications

(2 citation statements)

References 161 publications

(154 reference statements)

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“…Due to the considerable lattice mismatch, as well as the difference in thermal expansion coefficients, the as-grown 2DLMs are frequently strained. This strain effect may be exploited to engineer or enhance the functionalities of the 2DLMs on perovskite oxides, − but many further investigations are required to understand and manipulate this effect.…”

Section: Fabrication and Interfacial Properties Of 2dlm-perovskite Ox...mentioning

confidence: 99%

Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices

Yang

Wang

et al. 2023

ACS Nano

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As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, and packing density as well as functionalities. Heterogeneous integration, where dissimilar layers of materials and functionalities are unrestrictedly stacked at an atomic scale, is appealing for next-generation electronics, such as multifunctional, neuromorphic, spintronic, and ultralow-power devices, because it unlocks technologically useful interfaces of distinct functionalities. Recently, the combination of functional perovskite oxides and two-dimensional layered materials (2DLMs) led to unexpected functionalities and enhanced device performance. In this paper, we review the recent progress of the heterogeneous integration of perovskite oxides and 2DLMs from the perspectives of fabrication and interfacial properties, electronic applications, and challenges as well as outlooks. In particular, we focus on three types of attractive applications, namely field-effect transistors, memory, and neuromorphic electronics. The van der Waals integration approach is extendible to other oxides and 2DLMs, leading to almost unlimited combinations of oxides and 2DLMs and contributing to future high-performance electronic and spintronic devices.

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Section: Fabrication and Interfacial Properties Of 2dlm-perovskite Ox...mentioning

confidence: 99%

Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices

Yang

Wang

et al. 2023

ACS Nano

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“…A daunting challenge is to realize encapsulated transistors exhibiting strain-insensitive barrier performance under mechanical bending strains, which means that electrical properties, such as threshold voltage and mobility, must remain stable or exhibit negligible variations [ 16 , 17 , 18 , 19 , 20 ]. However, unencapsulated devices have ultrathin channels with fracture limits (~1% for Si NM), and thus the critical parameters usually change with the external strain [ 21 , 22 ].…”

Section: Introductionmentioning

confidence: 99%

Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors

Wang,

Lu,

Zhang

et al. 2023

Micromachines

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Ultrathin flexible encapsulation (UFE) using multilayered films has prospects for practical applications, such as implantable and wearable electronics. However, existing investigations of the effect of mechanical bending strains on electrical properties after the encapsulation procedure provide insufficient information for improving the electrical stability of ultrathin silicon nanomembrane (Si NM)-based metal oxide semiconductor capacitors (MOSCAPs). Here, we used atomic layer deposition and molecular layer deposition to generate 3.5 dyads of alternating 11 nm Al2O3 and 3.5 nm aluminum alkoxide (alucone) nanolaminates on flexible Si NM-based MOSCAPs. Moreover, we bent the MOSCAPs inwardly to radii of 85 and 110.5 mm and outwardly to radii of 77.5 and 38.5 mm. Subsequently, we tested the unbent and bent MOSCAPs to determine the effect of strain on various electrical parameters, namely the maximum capacitance, minimum capacitance, gate leakage current density, hysteresis voltage, effective oxide charge, oxide trapped charge, interface trap density, and frequency dispersion. The comparison of encapsulated and unencapsulated MOSCAPs on these critical parameters at bending strains indicated that Al2O3/alucone nanolaminates stabilized the electrical and interfacial characteristics of the Si NM-based MOSCAPs. These results highlight that ultrathin Al2O3/alucone nanolaminates are promising encapsulation materials for prolonging the operational lifetimes of flexible Si NM-based metal oxide semiconductor field-effect transistors.

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Micro/Nanofibers for Flexible, Stretchable, and Strain‐Insensitive Wearable Electronics‐ A Review

Hanif,

Kim

2024

Advanced Sensor Research

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The development of flexible and stretchable wearable electronics has significantly advanced smart fabrics, biomedical devices, and healthcare technologies. However, these devices often face challenges from mechanical deformations that disrupt signals, emphasizing the need for strain‐insensitive architectures to maintain functionality under varying strain conditions. Progress in this field relies on multifunctional, strain‐insensitive microfibers and nanofibers (NFs) to ensure consistent performance while minimizing signal interference caused by mechanical stress. This review highlights the advantages of fibers for flexible, stretchable, and strain‐insensitive wearable electronics, analyzing materials, fabrication methods, and design strategies that optimize strain insensitivity in single free‐standing microfibers (SFMs) and NF‐based devices. It emphasizes maintaining mechanical and electrical stability under large strains through strategic material selection, advanced fiber spinning techniques, and innovative structural designs. While emphasizing SFMs, this review also provides a concise exploration of the role of NFs within this context. The applications of SFMs in wearable electronics, particularly as conductors, sensors, and components in smart textiles, are discussed with an emphasis on strain insensitivity. The review concludes by addressing challenges in this evolving field of wearable electronics and outlining future research directions, offering insights to drive innovations in fiber‐based wearable electronics for reliable, lightweight, breathable, user‐friendly, and high‐performance wearable devices.

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Manipulating Strain in Transistors: From Mechanically Sensitive to Insensitive

Abstract: Figure 4. Possible applications of stretchable and flexible FETs.

Cited by 4 publications

References 161 publications

Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices

Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices

Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors

Micro/Nanofibers for Flexible, Stretchable, and Strain‐Insensitive Wearable Electronics‐ A Review

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