Inorganic
CsPbI3 perovskite solar cells (PSCs) have
attracted intense attention due to higher chemical stability and exceptional
optoelectronic properties. However, tremendous intrinsic defects in
CsPbI3 perovskite have induced serious charge recombination
loss, which greatly suppresses device performance. To address the
issue, surface engineering has been widely used to passivate the intrinsic
defects, which has well promoted the power conversation efficiency
(PCE) of CsPbI3 PSCs to over 21%. In this Forum Article,
recent progress in surface engineering for CsPbI3 perovskite
is systematically summarized, discussed, and categorized in the following
aspects: molecular modification, ion termination, in situ generation
of the second phase, and direct introduction of the second phase.
Finally, we present a brief outlook about challenges and opportunities
of surface engineering for CsPbI3 perovskite.