Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance

Zhang, Zhongwei; Xu, Wenjing; Liu, Chengyan; Li, Fucong; Hai-bin, Yang; Wang, Xiaoyang; Gao, Jie; Chen, Chen; Zhang, Qian; Liu, Jing; Bai, Xiaobo; Peng, Ying; Liu, Miao

doi:10.1021/acsaem.1c02442

Cited by 6 publications

(4 citation statements)

References 59 publications

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“…In fact, using excessive Sn results in the lowest amount of Sn vacancies in the samples, but they remain Sn deficient. These excess Sn will be located at the grain boundaries, as demonstrated by the transmission electron microscope of binary Sn 1.03 Te. ,, …”

Section: Resultsmentioning

confidence: 92%

“…These excess Sn will be located at the grain boundaries, as demonstrated by the transmission electron microscope of binary Sn 1.03 Te. 17,42,43 Figure 5a,b shows the SEM images of the fracture surface of samples SnTe and Sn 0.92 Mn 0.11 Te, respectively. The SEM image of SnTe in Figure 5a shows a layered structure (Figure S2) with grains with diameters of 2−5 μm.…”

Section: Resultsmentioning

confidence: 99%

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Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

Liu,

Guo,

Deng

2024

Inorg. Chem.

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SnTe is an environmentally friendly medium-temperature thermoelectric material, but its inherent low power factor (PF) and high lattice thermal conductivity severely limit its application. In this study, based on the fact that Mn doping can induce band convergence, the high-pressure and high-temperature (HPHT) synthesis method was used to optimize the sample preparation and shorten the synthesis cycle to 30 min. The results show that the Sn 0.93 Mn 0.10 Te sample achieves the maximum PF value of 34.00 μW cm −1 K −2 at 775 K and PF ave value of 21.36 μW cm −1 K −2 between 300−875 K. Microstructure analysis shows that the highpressure synthesis method introduces abundant grain boundaries, various grain sizes, multiple defects, and pore structures into the sample. These microscopic crystal structures can effectively scatter phonons and lower the lattice thermal conductivity. The modification of these micromorphologies results in the Sn 0.92 Mn 0.11 Te sample attaining a minimum lattice thermal conductivity of 0.45 W m −1 K −1 at 625 K. The thermoelectric figure of merit (zT) of sample Sn 0.92 Mn 0.11 Te reaches a maximum value of 1.1 at 775 K, and the zT ave reaches 0.63 in the range of 300−875 K. This study indicates that the synergistic effect of Mn element doping and microstructure modification can effectively optimize the thermoelectric transport performance of SnTe materials.

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Section: Resultsmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

Liu,

Guo,

Deng

2024

Inorg. Chem.

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“…Two weak peaks located at ≈30.7°and ≈32.1°are also detected that can be assigned to Sn, which is consistent with the previously reported results. [30,31] To directly explore the phase composition of Mn-alloyed SnTe-based samples, Figures 1d-f and Figure S2 (Supporting Information) display the BSE images and corresponding EDS mapping of x = 0, x = 0.10, x = 0.15, and x = 0.30 samples. Small amounts of Sn are detected in all samples.…”

Section: Resultsmentioning

confidence: 99%

Optimization of Mechanical and Thermoelectric Properties of SnTe‐Based Semiconductors by Mn Alloying Modulated Precipitation Evolution

Yang,

Wu,

Feng

et al. 2024

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Multiscale defects engineering offers a promising strategy for synergistically enhancing the thermoelectric and mechanical properties of thermoelectric semiconductors. However, the specific impact of individual defects, in particular precipitation, on mechanical properties remains ambiguous. In this work, the mechanical and thermoelectric properties of Sn1.03−xMnxTe (x = 0–0.30) semiconductors are systematically studied. Mn‐alloying induces dense dislocations and Mn nano‐precipitates, resulting in an enhanced compressive strength with x increased to 0.15. Quantitative calculations are performed to assess the strengthening contributions including grain boundary, solid solution, dislocation, and precipitation strengthening. Due to the dominant contribution of precipitation strengthening, the yield strength of the x = 0.10 sample is improved by ≈74.5% in comparison to the Mn‐free Sn1.03Te. For x ≥ 0.15, numerous MnTe precipitates lead to a synergistic enhancement of strength‐ductility. In addition, multiscale defects induced by Mn alloying can scatter phonons over a wide frequency spectrum. The peak figure of merit ZT of ≈1.3 and an ultralow lattice thermal conductivity of ≈0.35 Wm−1 K−1 are obtained at 873 K for x = 0.10 and x = 0.30 samples respectively. This work reveals tha precipitation evolution optimizes the mechanical and thermoelectric properties of Sn1.03−xMnxTe semiconductors, which may hold potential implications for other thermoelectric systems.

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“…Electrically, according to Mott’s express and Drude model, S and σ are coupled with each other via the carrier concentration − where k B is the Boltzmann constant, e is the electron charge, h is the Plank constant, m d * is the density of states (DOS) effective mass, n is the carrier concentration, and μ is the carrier mobility. To obtain an optimal PF, the carrier concentration optimization utilizing the heterovalent substitution doping (such as SnTe–Bi, SnTe–Sb, , SnTe–Cl, SnTe–Br, and SnTe–I) and the self-compensation Sn doping − can facilitate a delicate trade-off between S and σ . In addition, the strategies of band structure modification, such as band convergence ,− and resonance effect, ,− are successfully devoted to modifying m d * and thus strengthening the upper limit of the optimal PF.…”

Section: Introductionmentioning

confidence: 99%

Enabling High Quality Factor and Enhanced Thermoelectric Performance in BiBr₃-Doped Sn_0.93Mn_0.1Te via Band Convergence and Band Sharpening

Yang

Lyu

Nan

et al. 2022

ACS Appl. Mater. Interfaces

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Lead-free SnTe-based materials are expected to replace PbTe and have gained much attention from the thermoelectric community. In this work, a maximum ZT of ∼1.31 at 873 K is attained in SnTe via promoting a high quality factor resulting from Mn alloying and BiBr3 doping. The results show that Mn alloying in SnTe converges the L band and the ∑ band in valence bands to supply enhanced valley degeneracy and the density of states effective mass, giving rise to a high power factor of ∼21.67 μW cm–1 K–2 at 723 K in Sn0.93Mn0.1Te. In addition, the subsequent BiBr3 doping can sharpen the top of the valence band to coordinate the contradiction between the band effective mass and the carrier mobility, thus enhancing the carrier mobility while maintaining a relatively large density of states effective mass. Consequently, a maximum power factor of 23.85 μW cm–1 K–2 at 873 K is achieved in Sn0.93Mn0.1Te-0.8 atom % BiBr3. In addition to band sharpening, BiBr3 doping can also effectively suppress the bipolar effect at elevated temperatures and reduce the lattice thermal conductivity by strengthening the point defect phonon scattering. Benefitting from doping BiBr3 in Sn0.93Mn0.1Te optimizes the carrier mobility and suppresses the lattice thermal conductivity, resulting in a dramatically enhanced quality factor. Accordingly, an average ZT of ∼0.62 in the temperature range of 300–873 K is obtained in Sn0.93Mn0.1Te-0.8 atom % BiBr3, ∼250% increase compared with that in Sn1.03Te.

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Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance

Cited by 6 publications

References 59 publications

Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

Optimization of Mechanical and Thermoelectric Properties of SnTe‐Based Semiconductors by Mn Alloying Modulated Precipitation Evolution

Enabling High Quality Factor and Enhanced Thermoelectric Performance in BiBr₃-Doped Sn_0.93Mn_0.1Te via Band Convergence and Band Sharpening

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Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance

Cited by 6 publications

References 59 publications

Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

Optimization of Mechanical and Thermoelectric Properties of SnTe‐Based Semiconductors by Mn Alloying Modulated Precipitation Evolution

Enabling High Quality Factor and Enhanced Thermoelectric Performance in BiBr3-Doped Sn0.93Mn0.1Te via Band Convergence and Band Sharpening

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Enabling High Quality Factor and Enhanced Thermoelectric Performance in BiBr₃-Doped Sn_0.93Mn_0.1Te via Band Convergence and Band Sharpening