Abstract. Effects of a longitudinal magnetic field on optical spin injection and detection in InAs/GaAs quantum dot (QD) structures are investigated by optical orientation spectroscopy. An increase in optical and spin polarization of the QDs is observed with increasing magnetic field in the range of 0-2 T, and is attributed to suppression of exciton spin depolarization within the QDs that is promoted by hyperfine interaction and anisotropic electron-hole exchange interaction. This leads to a corresponding enhancement in spin detection efficiency of the QDs by a factor of up to 2.5. At higher magnetic fields when these spin depolarization processes are quenched, electron spin polarization in anisotropic QD structures (such as double QDs that are preferably aligned along a specific crystallographic axis) still exhibits rather strong field dependence under non-resonant excitation. In contrast, such field dependence is practically absent in more "isotropic" QD structures (e.g. single QDs). We attribute the observed effect to stronger electron spin relaxation in the spin injectors (i.e. wetting layer and GaAs barriers) of the lower-symmetry QD structures, which also explains the lower spin injection efficiency observed in these structures.PACS numbers: 73.21. La, 78.67.Hc, 72.25.Fe, 72.25.Rb
IntroductionSemiconductor quantum dot (QD) structures are currently under intense investigations in view of their potential applications in spin-based quantum information technology and nanospintronics, as the three-dimensional carrier confinement in these structures promises suppression of many spin relaxation mechanisms that are predominant in semiconductors of higher dimensionality [1]. In threeand two-dimensional structures, the most important spin relaxation mechanisms such as the D'yakonov-Perel and Elliott-Yafet mechanisms are promoted by the motion of carriers. For confined carriers in QDs, the lack of carrier motion efficiently deactivates these spin relaxation mechanisms. Furthermore, their atomic-like, discrete energy level structure restricts efficiency of phonon-induced inelastic scattering processes. Hyperfine interactions of confined carriers with nuclear spins of host lattice atoms within QDs [2,3] and carrier-carrier exchange interaction [4] become the dominant spin relaxation mechanisms at low temperatures. The expected extended carrier spin lifetimes have been confirmed experimentally [5][6][7][8], and efficient room-temperature spin detection has also recently been demonstrated [9], which is encouraging for proposals of QDs in applications of quantum computing