Switching
of magnetism with low energy consumption is the key for
future spintronics. Utilizing a series of electrical break-down processes,
we successfully convert the insulator Gd3Fe5O12 with resistance >2 × 108 Ω
into
a highly conductive semiconductor with a resistance of ∼400
Ω. Combining X-ray photoelectron spectroscopy, X-ray diffraction,
energy-dispersive spectrometry, and density functional theory, we
propose that dramatic enhancements of Gd3Fe5O12 conductance may be due to the dilute Ag substitutions
in Fe sites, which can significantly suppress the band gap of Gd3Fe5O12 by >75%. In the processed
Gd3Fe5O12, magnetic properties including
residual magnetization, coercive field, and saturated magnetism are
found to be highly sensitive to electric currents. More importantly,
both nonvolatile and zero-field volatile magnetization reversions
are observed in processed Gd3Fe5O12 via applying an electric current with an ultralow density of ∼10–3A/cm2 under room temperature, suggesting
that the novel conductive Gd3Fe5O12 is a promising candidate to achieve flexible and low-consumption
switching of magnetism.