2022
DOI: 10.1039/d2ce01305c
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Manipulation of the 1T-MoS2 domain in a 2H-MoS2 main phase induced by V-doping via a CVD vapor–liquid–solid mechanism

Abstract: Phase engineering of two-dimensional molybdenum disulfide (2D-MoS2), is currently undergoing exhaustive research to develop numerous applications, including optoelectronic devices, Spintronics, and new platforms for the study of unconventional quantum phenomena....

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Cited by 2 publications
(2 citation statements)
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“…137 The ratio of precursor concentration also affects the growth mode during the growth period of TMDs. 138 Therefore, it is necessary to ensure an adequate supply of precursors throughout the growth process as well as appropriate precursor concentration ratios, which are related to growth parameters such as temperature, carrier gas flow rate, and furnace pressure.…”
Section: ġðXþmentioning
confidence: 99%
“…137 The ratio of precursor concentration also affects the growth mode during the growth period of TMDs. 138 Therefore, it is necessary to ensure an adequate supply of precursors throughout the growth process as well as appropriate precursor concentration ratios, which are related to growth parameters such as temperature, carrier gas flow rate, and furnace pressure.…”
Section: ġðXþmentioning
confidence: 99%
“…194 There are several methods to fabricate 1T-MoS 2 . One common method is CVD, 195 which involves the decomposition of precursor molecules on a substrate at high temperatures to form a thin film of 1T-MoS 2 . Another method is electrochemical exfoliation, 196 which involves the application of an electric field to a bulk MoS 2 sample in a liquid electrolyte to exfoliate the material into individual 1T-MoS 2 flakes.…”
Section: D Tmdsmentioning
confidence: 99%