Manufacturability and performance of 2.3-µm HgCdTe H2RG sensor chip assemblies for Euclid

Bai, Yibin; Farris, Mark; Fischer, Lisa; Maiten, Jessica; Kopp, Robert; Piquette, E. C.; Ellsworth, J.; Yulius, A.; Chen, Annie; Tallarico, Stephanie; Hernandez, Elizabeth; Holland, Eric; Boehmer, E.; Carmody, M.; Beletic, James W.; Cho, Hyung; Holmes, W. A.; Seiffert, M. D.; Pravdo, S. H.; Jhabvala, M.; Waczynski, Augustyn

doi:10.1117/12.2317733

Cited by 5 publications

(2 citation statements)

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“…It is also one of the ideal electronic packaging materials and has been widely used in the cold platform of cooled infrared detectors. [4][5][6] The combination of Mo and Si 3 N 4 ceramics can give full play to the advantages of both in electronic packaging.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Mechanical Properties of the Joint between Si₃N₄ and Mo Brazed by Near‐Eutectic Ag–Cu–In–Ti Filler Alloy

Zhao,

Mo,

Shi

et al. 2023

Adv Eng Mater

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The joining of Si3N4 and Mo using Ag–Cu–In–Ti active filler alloy with the brazing temperature ranging from 720 to 860 °C for 10 min is investigated in this article. The correlation between the joint strength and the microstructures of the brazed joints is discussed. In the results, it is shown that the activity of Ti is different at different temperatures, and thus the degree of diffusion of Ti to the interface is different. The activity of Ti gradually increases as the brazing temperature increases, and more Ti atoms diffuse into both sides of the base materials, resulting in a progressively thicker TiN + Ti5Si3 reaction layer on the Si3N4 ceramic side. Between 720 and 860 °C, the shear strength of the joint first increases and then decreases with brazing temperature. The maximum shear strength (223 MPa) is obtained at 830 °C.

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Section: Introductionmentioning

confidence: 99%

Microstructure and Mechanical Properties of the Joint between Si₃N₄ and Mo Brazed by Near‐Eutectic Ag–Cu–In–Ti Filler Alloy

Zhao,

Mo,

Shi

et al. 2023

Adv Eng Mater

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“…This triplet of SCA, CFC and SCE are custom made by Teledyne Imaging Sensors (TIS) for the Euclid mission and provided by NASA through JPL with characterisation and acceptance testing under responsibility of the Detector Characterization Laboratory (DCL) at Goddard Space Flight Center (GSFC). More details on the Euclid SCAs can be found in [4].…”

Section: Introductionmentioning

confidence: 99%

Random telegraph signal (RTS) in the Euclid IR H2RGs

Kohley

Barbier

Clémens

et al. 2018

High Energy, Optical, and Infrared Detectors for Astronomy VIII

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Euclid is an ESA mission to map the geometry of the dark Universe with a planned launch date in 2021. Euclid is optimised for two primary cosmological probes, weak gravitational lensing and baryonic acoustic oscillations. They are implemented through two science instruments on-board Euclid, a visible imager (VIS) and a near-infrared photometer/spectrometer (NISP), which are being developed and built by the Euclid Consortium instrument development teams. The NISP instrument contains a large focal plane assembly of 16 Teledyne HgCdTe H2RG detectors with 2.3 µm cut-off wavelength and SIDECAR readout electronics. The performance of the detector systems is critical for the science return of the mission and extended on-ground tests are being performed for characterisation and calibration purposes. Special attention is given also to effects even on the scale of individual pixels, which are difficult to model and calibrate, and to identify any possible impact on science performance. This paper discusses the known effect of random telegraph signal (RTS) in a follow-on study of test results from the Euclid NISP detector system demonstrator model [1], addressing open issues and focusing on an in-depth analysis of the RTS behaviour over the pixel population on the studied Euclid H2RGs.

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A cryogenic CMOS chip for generating control signals for multiple qubits

et al. 2021

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Manufacturability and performance of 2.3-µm HgCdTe H2RG sensor chip assemblies for Euclid

Cited by 5 publications

References 1 publication

Microstructure and Mechanical Properties of the Joint between Si₃N₄ and Mo Brazed by Near‐Eutectic Ag–Cu–In–Ti Filler Alloy

Microstructure and Mechanical Properties of the Joint between Si₃N₄ and Mo Brazed by Near‐Eutectic Ag–Cu–In–Ti Filler Alloy

Random telegraph signal (RTS) in the Euclid IR H2RGs

A cryogenic CMOS chip for generating control signals for multiple qubits

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Manufacturability and performance of 2.3-µm HgCdTe H2RG sensor chip assemblies for Euclid

Cited by 5 publications

References 1 publication

Microstructure and Mechanical Properties of the Joint between Si3N4 and Mo Brazed by Near‐Eutectic Ag–Cu–In–Ti Filler Alloy

Microstructure and Mechanical Properties of the Joint between Si3N4 and Mo Brazed by Near‐Eutectic Ag–Cu–In–Ti Filler Alloy

Random telegraph signal (RTS) in the Euclid IR H2RGs

A cryogenic CMOS chip for generating control signals for multiple qubits

Contact Info

Product

Resources

About

Microstructure and Mechanical Properties of the Joint between Si₃N₄ and Mo Brazed by Near‐Eutectic Ag–Cu–In–Ti Filler Alloy

Microstructure and Mechanical Properties of the Joint between Si₃N₄ and Mo Brazed by Near‐Eutectic Ag–Cu–In–Ti Filler Alloy