2020
DOI: 10.3390/mi11121126
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Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

Abstract: This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology impr… Show more

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Cited by 18 publications
(17 citation statements)
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“…The warp shape is the result of the mechanical stress induced on the silicon wafer during different manufacturing and polishing steps [12,13].…”
Section: Warp Measurementmentioning
confidence: 99%
“…The warp shape is the result of the mechanical stress induced on the silicon wafer during different manufacturing and polishing steps [12,13].…”
Section: Warp Measurementmentioning
confidence: 99%
“…This structure reduces the loss of charge carriers due to trapping effects, the charge collection time, and the voltage for full depletion, compared to planar silicon detectors [34]. The isolated radiation sensitive volume (SV) has been fabricated using MEMS technology optimized for years at IMB-CNM [35][36][37][38] and mimics the shapes and microscopic sizes of mammalian cells of few micrometers of diameter. More information about the Frontiers in Physics frontiersin.org readout chip (ROC, or application-specific integrated circuit, ASIC) in order to analyze the signals individually (bottom of Figure 2B).…”
Section: Microdosimetry Systemsmentioning
confidence: 99%
“…However, none of the existing systems (commercial or experimental) have spatial resolution along the transverse beam direction and of a data acquisition adaptation for clinical conditions. In order to improve the current silicon-based microdosimeters, a new 3D-cylindrical architecture of silicon-based radiation detectors was designed in 2012 and eventually manufactured in 2015 31 , 37 by using micro manufacturing techniques optimized for 3D detectors that had been developed by Pellegrini et al during the previous decade in the Radiation Detectors group of the National Center of Microelectronics (IMB-CNM, CSIC), Spain 38 – 40 . Compared to planar silicon detectors, the 3D architecture reduces the loss of charge carriers due to trapping effects, the charge collection time, and the voltage for full depletion 41 – 43 .…”
Section: Introductionmentioning
confidence: 99%