Manufacturable High-Density 8 Mbit One Transistor–One Capacitor Embedded Ferroelectric Random Access Memory

Abstract

Enhanced yield and reliability through process improvements, leading to a manufacturable process for a full-bit functional 8 Mbit one transitor-one capacitor (1T-1C) embedded ferroelectric random access memory (eFRAM) fabricated within a lowleakage 130 nm, 5 lm Cu/fluorosilicate glass (FSG) interconnect complementary metal oxide semiconductor (CMOS) logic process, are described. Higher signal margins are further enabled by the single-bit substitution methodology that replaces bits at the low-end of the original distribution with redundant elements. Retention tests on wafers with signal margins above a threshold value for screen show no bit fails for bakes extending up to 1000 h, suggesting retention lifetimes of more than 10 years at 85 C. Using the qualified process reported in this paper, commercial products are being routinely produced in our fabrication facilities.

Thin film ferroelectric photonic-electronic memory

“…Ferroelectricity discovered in the doped-HfO 2 thin lm has garnered signi cant attention as a technology enabler for emerging ferroelectric (FE) memory [37][38][39][40] . Compared with FE materials in complex perovskite systems 41,42 , doped-HfO 2 shows great promise and better performances for non-volatile device applications due to its full CMOS compatibility, high scalability, and advantage of retention characteristics 43,44 . In this work, we demonstrate a non-volatile multi-level photonic-electronic memory by introducing an Al-doped HfO 2 (HAO) FE thin lm onto a silicon photonic platform.…”

Thermal stability of hafnium zirconium oxide on transition metal dichalcogenides

“…Ferroelectrics have been utilized in non-volatile memory devices owing to their bi-stable and reversible polarization states and low power consumption [1]. The most common ferroelectrics in such devices, such as lead zirconate titanate, however, suffer from size scaling effects [2] that limit the accessible technology node to 130 nm [3]. The relatively recent discovery of ferroelectricity in sub-20 nm thick, crystalline silicon-doped HfO 2 [4] offers a potential pathway toward continued device scaling [5] and development of new devices utilizing the switchable polarization.…”

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf0.5Zr0.5O2 Thin Films

“…Among the ferroelectric materials, two major classes have emerged as useful choices for the application in ferroelectric random access memories (FeRAM) and ferroelectric field‐effect transistors (FeFET): perovskite and HfO 2 ‐based ferroelectric materials. Several issues in complementary metal–oxide–semiconductor (CMOS) process integration of perovskite‐based ferroelectrics such as contamination caused by lead‐based oxides, a high thermal budget required to achieve the ferroelectric phase, [ 1 ] and hydrogen sensitivity [ 2 ] lead to limited scalability, [ 3 ] and therefore hinder the progress of ferroelectric integration into state‐of‐the‐art CMOS technologies. In contrast, HfO 2 ‐based ferroelectrics promise to solve the previously mentioned obstacles, [ 4 ] but do suffer from defects, [ 5 ] a high coercive field leading to high switching voltages and low endurance, [ 6 ] and charge trapping.…”