15th Annual GaAs IC Symposium
DOI: 10.1109/gaas.1993.394437
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Manufacturing AlGaAs/GaAs HBTs on 100 mm wafers

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“…For a switching current of 2 mA, unloaded gate delays on the order of 20 ps and rise times of 30-40 ps are possible [4], [21]. The test chip was fabricated on 100-mm wafers [22]. Typical HBT base widths vary from 500 to 1000Å.…”
Section: Fabrication Process and Test Structuresmentioning
confidence: 99%
“…For a switching current of 2 mA, unloaded gate delays on the order of 20 ps and rise times of 30-40 ps are possible [4], [21]. The test chip was fabricated on 100-mm wafers [22]. Typical HBT base widths vary from 500 to 1000Å.…”
Section: Fabrication Process and Test Structuresmentioning
confidence: 99%