Mapping between two models of etching process

Abstract

We consider two models for the etching processes using numerical simulations based on cellular-automata discrete-lattice approach. In one model we use a uniform etching probability for each surface site. In another model the etching probability at a given site depends on the local environment of this site. In contrast to the first model we have now a non-local description of the surface evolution. It is natural to consider the following question: is this non-locality sufficient to induce new physics? To answer this question is the main goal of the paper. We show that there exists an equivalence between the two models. This means that the non-local model gives results similar to the local one provided we use an effective value of the etching probability.

Stochastic simulation of destruction processes in self-irradiated materials

“…In the present study, we propose a simple mesoscopic model of surface destruction processes in NFC materials, which is implemented on two-dimensional lattice with the use of a stochastic algorithm similar to the cellular automata concept [26,27]. It is assumed that the detachment of nanoparticles at the NFC material surface results from the formation of damaged regions and microfracturing in the vicinity of the locations where nuclear decays take place.…”

3D continuum percolation approach and its application to lava-like fuel-containing materials behaviour forecast

“…Common examples are doped materials [9] and polymers [10]. The simulation of etching process in natural application for percolation simulations as well [11]. The present work is devoted to the solution of some special percolation problems in order to characterize critical behaviour resulting from volume-generated radiation damages in condensed matter.…”