2013
DOI: 10.1002/adma.201300958
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Mapping of Trap Densities and Hotspots in Pentacene Thin‐Film Transistors by Frequency‐Resolved Scanning Photoresponse Microscopy

Abstract: Frequency-resolved scanning photoresponse microscopy of pentacene thin-film transistors is reported. The photoresponse pattern maps the in-plane distribution of trap states which is superimposed by the level of trap filling adjusted by the gate voltage of the transistor. Local hotspots in the photoresponse map thus indicate areas of high trap densities within the pentacene thin film.

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Cited by 27 publications
(21 citation statements)
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References 42 publications
(33 reference statements)
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“…The shift towards more positive values is instead associated with the accumulation/entrapping of photogenerated electrons [23]. These results of and under light are in agreement with those of other pentacene-based devices reported in literature [21], [22].…”
Section: Ofet Characterization At Room Temperaturesupporting
confidence: 91%
See 1 more Smart Citation
“…The shift towards more positive values is instead associated with the accumulation/entrapping of photogenerated electrons [23]. These results of and under light are in agreement with those of other pentacene-based devices reported in literature [21], [22].…”
Section: Ofet Characterization At Room Temperaturesupporting
confidence: 91%
“…When the total increment of (the photocurrent) is a function of two components: the current due to the photogenerated holes (direct photocurrent) and the current associated with the shift (photovoltaic current) towards more positive values. The latter one is specifically due to the accumulation/entrapping of photogenerated electrons [23]. A signif- Fig.…”
Section: Ofet Characterization At Room Temperaturementioning
confidence: 99%
“…To maximize its mobility, the most crucial parameters for pentacene quality have been identified to be the substrate and its temperature during deposition1567. On the one hand, substrate temperatures well above 50 °C result in larger grains of the film structure with characteristic lengths of microns8. On the other hand, deposition temperature also controls the abundance of several crystallographic phases, such as thin-film phase (TFP) and bulk phase (BP) pentacene569.…”
mentioning
confidence: 99%
“…Small grain domains are usually undesirable: Grain boundaries with low‐order regions contain many morphological defects, which in turn are linked to the creation of charge carrier traps. However, carrier mobilities and threshold voltages in organic thin‐film transistor devices are determined by charge traps in the channel region, most of which are located not at the grain boundaries of the organic semiconductor, but instead at the organic/insulating‐layer interface . This argument may explain why in some cases organic thin‐film transistors with smaller grain sizes show higher mobilities than counterparts with larger grain sizes: It is the structural order and molecular orientation within the active channel at the semiconductor‐dielectric interface that is a key .…”
Section: Resultsmentioning
confidence: 99%